Growth of Nanocrystalline MoSe₂ Monolayers on Epitaxial Graphene from Amorphous Precursors

Abstract

A new approach to the growth of MoSe 2 thin films on epitaxial graphene on SiC(0001) by the use of modulated elemental reactants (MER) precursors has been reported. The synthesis applies a two-step process, where first an amorphous precursor is deposited on the substrate which self-assembles upon annealing. Films with a nominal thickness of about 1 ML are successfully grown on epitaxial graphene monolayer as well as buffer layer samples. Characterization of the films is performed using XPS, LEED, AFM, and Raman spectroscopy. The films are nanocrystalline and show randomly rotated domains. This approach opens up an avenue to synthesize a number of new van-der-Waals systems on epitaxial graphene and other substrates.

Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe 2 few-layers on SiO 2 /Si

“…In this case, the flakes are free to rotate and minimize the system energy by lying parallel to the surface and forming grain boundaries to saturate the dangling bonds at the edges. Using a chemical route, a similar approach was used by Göhler et al for the growth of nanocrystalline MoSe2 on epitaxial graphene on SiC [49].…”

“…In this case, the flakes are free to rotate and minimize the system energy by lying parallel to the surface and forming grain boundaries to saturate the dangling bonds at the edges. Using a chemical route, a similar approach was used by G 'ohler et al for the growth of nanocrystalline MoSe2 on epitaxial graphene on SiC[49].The monolayer of MoSe 2 acts as a van der Waals template and favors the two-dimensional growth of the two topmost MoSe 2 layers grown by SPE. We thus call this growth method van der Waals SPE.…”