Growth of MoS2 films: High-quality monolayered and multilayered material

Abstract

Transition-metal-dichalcogenide materials (TMDs) are proceeding toward future nanoelectronic devices as comprehensive research in this domain proves their extraordinary properties and potential for application in diverse fields. There are associated challenges related to the quality of grown material, grain size, and adaptiveness to a selected substrate, and chemical vapor deposition is considered the ideal technique in these regards. Salt-assisted growth of two-dimensional TMDs has recently solved some growth issues associated with the high melting points of some oxides and the low vapor pressure, which leads to limitations in the growth area. In the current study, NaCl-assisted growth is used to produce high-quality monolayered films on Si/SiO2 and multilayered films of MoS2 on fluorine-doped tin oxide. An empirical methodology was used to determine optimal conditions for sample growth. Factors such as precursor weights and ratios, temperature, and sulfurization were investigated with respect to preparing samples for exploitable applications.