Growth of Microcrystalline Silicon in Ultrathin Layers

Abstract

We report recent studies of the crystallization of ultrathin (< 10 nm ) amorphous silicon layers clad by silicon dioxide. We observe changes in Raman scattering spectra which indicate that nanocrystalline silicon layers formed by crystallization of amorphous silicon continue to evolve structurally with further annealing. There is evidence for significant strain in crystallized material.