Growth of MgB2 thin films on alumina-buffered Si substrates by using hybrid physical–chemical vapor deposition method

Lee, T.G.; Park, S.W.; Seong, Won Kyung; Huh, Joonsuk; Jung, Soon‐Gil; Lee, B.K.; An, Ki‐Seok; Kang, Won Nam

doi:10.1016/j.physc.2008.05.218

Cited by 5 publications

(2 citation statements)

References 32 publications

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“…One may also grow MgB 2 on the top of the alloy layer [18]. Lee et al have grown MgB 2 films on Al 2 O 3 buffered Si substrates at low temperatures (500 °C-600 °C) using HPCVD [19]. However, the films grown at lower temperatures showed rough surfaces making it difficult to use for micron-size device fabrication, and some alloy formation was observed even with the low deposition temperature and the Al 2 O 3 buffer layer.…”

Section: Methodsmentioning

confidence: 99%

Growth of magnesium diboride thin films on boron buffered Si and silicon-on-insulator substrates by hybrid physical chemical vapor deposition

Withanage

Penmatsa

Acharya

et al. 2018

Supercond. Sci. Technol.

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We report on the growth of high quality MgB 2 thin films on silicon and silicon-on-insulator substrates by hybrid physical chemical vapor deposition. A boron buffer layer was deposited on all sides of the Si substrate to prevent the reaction of Mg vapor and Si. Ar ion milling at a low angle of 1°was used to reduce the roughness of the boron buffer layer before the MgB 2 growth. An Ar ion milling at low angle of 1°was also applied to the MgB 2 surface to reduce its roughness. The resultant MgB 2 films showed excellent superconducting properties and a smooth surface. The process produces thin MgB 2 films suitable for waveguide-based superconducting hot electron bolometers and other MgB 2 -based electronic devices.

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Section: Methodsmentioning

confidence: 99%

Growth of magnesium diboride thin films on boron buffered Si and silicon-on-insulator substrates by hybrid physical chemical vapor deposition

Withanage

Penmatsa

Acharya

et al. 2018

Supercond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The discovery of 39 K superconductivity in MgB 2 [1] has stimulated extensive research on the production of the material in several forms such as tapes [2], wires [3,4], thin and thick films [5][6][7]. The production of MgB 2 films and wires exhibits difficulties arising from the considerable volatility of magnesium and its high reactivity with oxygen.…”

Section: Introductionmentioning

confidence: 99%

Production of MgB2 superconducting coatings by electrophoresis on metal substrates

Argyropoulou

Ochsenkühn-Petropoulou

2009

Journal of Alloys and Compounds

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MgB₂– An Intermediate‐Temperature Superconductor

Wesche¹

2015

Physical Properties of High‐Temperature Superconductors

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Growth of MgB2 thin films on alumina-buffered Si substrates by using hybrid physical–chemical vapor deposition method

Cited by 5 publications

References 32 publications

Growth of magnesium diboride thin films on boron buffered Si and silicon-on-insulator substrates by hybrid physical chemical vapor deposition

Growth of magnesium diboride thin films on boron buffered Si and silicon-on-insulator substrates by hybrid physical chemical vapor deposition

Production of MgB2 superconducting coatings by electrophoresis on metal substrates

MgB₂– An Intermediate‐Temperature Superconductor

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Growth of MgB2 thin films on alumina-buffered Si substrates by using hybrid physical–chemical vapor deposition method

Cited by 5 publications

References 32 publications

Growth of magnesium diboride thin films on boron buffered Si and silicon-on-insulator substrates by hybrid physical chemical vapor deposition

Growth of magnesium diboride thin films on boron buffered Si and silicon-on-insulator substrates by hybrid physical chemical vapor deposition

Production of MgB2 superconducting coatings by electrophoresis on metal substrates

MgB2– An Intermediate‐Temperature Superconductor

Contact Info

Product

Resources

About

MgB₂– An Intermediate‐Temperature Superconductor