Growth of Mg-doped GaN micro-crystals using MgCl2 in direct reaction of Ga and NH3

Lee, S.H.; Ahn, Sang Hyun; Kim, K.C.; Suh, Eun Kyung; Nahm, Kee Suk

doi:10.1016/s0022-0248(02)02147-4

Cited by 3 publications

(2 citation statements)

References 21 publications

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“…In fact, many present synthesis methods for GaN single crystals [9] and epitaxial growth techniques [10][11][12] evolved from this approach. By injecting NH 3 gas into molten Ga, Shibata et al [13] synthesized a large amount of GaN powder at temperatures between 900 and 980 1C under atmospheric pressure.…”

Section: Introductionmentioning

confidence: 99%

Study on the kinetics of the formation reaction of GaN from Ga-solutions under ammonia atmosphere

Sun

Meissner

Berwian

et al. 2007

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Study on the kinetics of the formation reaction of GaN from Ga-solutions under ammonia atmosphere

Sun

Meissner

Berwian

et al. 2007

Journal of Crystal Growth

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“…On the other hand, high-quality, crystalline GaN powders are used as phosphors with high luminescent intensities and efficiencies for use as multicolor vacuum fluorescent displays and field emission displays. , However, synthesis of crystalline GaN of good quality is still a difficult task, and thus commercially available GaN powder is of poor quality and high cost. There have been many papers related to the synthesis of high-quality GaN powder by reaction of Ga or Ga 2 O 3 with NH 3 . − Balkzs and Davis have prepared single phase GaN powder of high purity by the above reactions .…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Ge-Doped GaN Crystalline Powders Deposited on Graphite and Silica Glass Substrates

Shimada¹,

Miura²,

Miura³

et al. 2007

Crystal Growth & Design

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Gallium nitride (GaN) powders doped with various amounts of Ge were deposited at 1000 and 1180 °C on graphite and silica glass substrates by a 1-h reaction of NH 3 with gaseous Ga 2 O and GeO, produced by the reaction of carbon with Ga 2 O 3 and GeO 2 , respectively. The crystallinity of the GaN powders was determined by X-ray diffraction (XRD) and Raman spectroscopy, and their morphology was observed by scanning electron microscopy. The luminescence of the powders was measured at room temperature by cathodoluminescence (CL) to evaluate the quality of the GaN crystals. The influence of Ge-doping of the GaN powders on their crystallinity, morphology, and luminescence is discussed on the basis of the XRD, Raman spectroscopy, and CL results. It is shown that Ge-doped GaN crystals exhibit very high CL intensities accompanied by the elimination of defect-related emission at 430 nm.

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Synthesis and characterization of Zn-doped GaN crystals by simultaneous carbothermal reduction and nitridation of Ga2O3 and ZnO

Shimada

Otani

Miura

et al. 2010

Journal of Crystal Growth

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Growth of Mg-doped GaN micro-crystals using MgCl2 in direct reaction of Ga and NH3

Cited by 3 publications

References 21 publications

Study on the kinetics of the formation reaction of GaN from Ga-solutions under ammonia atmosphere

Study on the kinetics of the formation reaction of GaN from Ga-solutions under ammonia atmosphere

Synthesis and Characterization of Ge-Doped GaN Crystalline Powders Deposited on Graphite and Silica Glass Substrates

Synthesis and characterization of Zn-doped GaN crystals by simultaneous carbothermal reduction and nitridation of Ga2O3 and ZnO

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