Growth of Low-defect Si-Doped Ga2O3 Film on Fluorine-doped Tin Oxide Substrate for Self-powered and High-performance Ultraviolet Photodetector

Nguyen, Thi My Huyen; Tran, Manh Hoang; Bark, Chung Wung

doi:10.1021/acsaelm.3c01332

ACS Appl. Electron. Mater.

2023

DOI: 10.1021/acsaelm.3c01332

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Growth of Low-defect Si-Doped Ga₂O₃ Film on Fluorine-doped Tin Oxide Substrate for Self-powered and High-performance Ultraviolet Photodetector

Thi My Huyen Nguyen,

Manh Hoang Tran,

Chung Wung Bark

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2024

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Cited by 2 publications

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All-Inorganic Nanocomposite Enhancing Photomultiplication for Sensitive and Stable Ultraviolet Detection

Tran,

Nguyen,

Bark

2024

ACS Appl. Electron. Mater.

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Although photovoltaic ultraviolet (UV) detectors, typically made from silicon, silicon carbide, or gallium nitride, are well developed and have the advantages of simple fabrication and low-power operation, their relatively limited responsivities are unsuitable for practical applications that require ultrahigh sensitivity to weak UV light. On the contrary, the field-effect phototransistors, fabricated via complex processes along with high-voltage operation, can achieve an ultrahigh photoresponse. As a reasonable compromise among high performance, ease of production, and operation, we propose a photomultiplication (PM)-type UV detector based on an inorganic SnO 2 :TiO 2 photoactive layer. Owing to effective trap-assisted band bending of the TiO 2 layer upon UV light, the PM device exhibits a high specific detectivity of 2.3 × 10 13 Jones and a superior external quantum efficiency of 2220% at an extremely low light intensity of 37.5 pW. Hence, this study provides a platform for designing high-sensitivity PM detectors for practical applications.

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All-Inorganic Nanocomposite Enhancing Photomultiplication for Sensitive and Stable Ultraviolet Detection

Tran,

Nguyen,

Bark

2024

ACS Appl. Electron. Mater.

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GaSe/β-Ga2O3 heterojunction based self-powered solar-blind ultraviolet photoelectric detector

Su,

Xi,

et al. 2024

Acta Phys. Sin.

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UV photodetectors have the advantages of high sensitivity and fast response speed. As an ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) plays an extremely important role in the field of deep ultraviolet detection. It can form a typical type II heterostructure with GaSe, which promotes carrier separation and transport. In this paper, Ga2O3 epitaxial films were grown on sapphire substrates by plasma-assisted chemical vapor deposition (PECVD). GaSe films and GaSe/β-Ga2O3 heterojunction photodetectors were grown on gallium oxide films by Bridgeman technology. The detector has a good response to deep ultraviolet light, the dark current of the device is only 1.83 pA at 8 V, and the photocurrent reaches 6.5 nA at 254 nm. the UVC/Visible (254 nm/600 nm) has a high rejection ratio of about 354. Although at very small light intensities, the responsivity and detection reach 1.49 mA/W and 6.65× 1011 Jones. At the same time, due to the photovoltaic effect formed by the space charge region at the junction interface, the detector exhibits self-power supply performance at zero bias voltage, and the open-circuit voltage is 0.2 V. In addition, the detector has a very good sensitivity, whether it is irradiated with different light intensities under the condition of constant voltage, or changing the voltage under the condition of constant light intensity, the device can respond quickly. It can respond within milliseconds under a bias voltage of 10V. This paper demonstrates the enormous potential of heterojunctions in photoelectric detection by analyzing the photophysical and interface physical issues involved in heterojunction photodectectors, and provides a possibility for the deep ultraviolet detection of gallium oxide.

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Growth of Low-defect Si-Doped Ga₂O₃ Film on Fluorine-doped Tin Oxide Substrate for Self-powered and High-performance Ultraviolet Photodetector

Cited by 2 publications

References 50 publications

All-Inorganic Nanocomposite Enhancing Photomultiplication for Sensitive and Stable Ultraviolet Detection

All-Inorganic Nanocomposite Enhancing Photomultiplication for Sensitive and Stable Ultraviolet Detection

GaSe/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> heterojunction based self-powered solar-blind ultraviolet photoelectric detector

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