Growth of large-scale two-dimensional insulator Na₂Ta₄O₁₁ through chemical vapor deposition

Abstract

The insulator Na2Ta4O11 has been considered as a potential photocatalyst. However, little attention has been given to the synthesis of Na2Ta4O11 nanoparticles, let alone the growth of two-dimensional (2D) layered Na2Ta4O11 flake, which may bring innovative properties and promising applications. Here, the 2D thin-layer Na2Ta4O11 flake was first produced by chemical vapor deposition (CVD) method, with the smallest thickness reported currently. We have also synthesized 2D Na2Ta4O11 flake over 100 μm, which was the largest value over the 2D level reported to date. Our work proposed novel strategies to synthesize other 2D metal oxide material and endow the Na2Ta4O11 more properties and applications.

Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric

“…Compared to mechanical exfoliation, direct growth of free-standing ultrathin 2D insulators with high- k nature by chemical vapor deposition (CVD) is much more efficient, but remains challenging. Typically, CVD-grown atomically thin 2D insulators with a layered crystal structure preferably adopt an in-plane growth mode on substrates 26 – 29 , which will inevitably set obstacles for clean sample transfer and subsequent vdWs integration. However, if an ultrathin 2D insulator can be vertically grown on the substrate, just like the case in Bi 2 O 2 Se 3 , 30 , 31 , the transfer problem can be easily overcome due to much reduced interfacial interaction.…”

Molten Salt Synthesized CaTa4O11:Er3+/Yb3+ with Superior Upconversion Luminescence

“…These vibration peaks primarily come from TaO 6 , TaO 7 , and CaO 8 polyhedrons, Ta−O−Ta and Ta−O−Ca bonds, etc. 43,44 Although it is difficult to compare the Raman results of CTO with those of other groups due to the lack of experimental details, we are still able to get some accurate information by comparing with the Raman results of BiTa 7 O 19 from our previous study. 17 It can be determined that the red shift and broadening of the υ 4 vibration peak are caused by the substitution of Er 3+ /Yb 3+ for Bi 3+ and the blue shift or red shift of the υ 1 vibration peak is caused by the change of the Ta−O− Ta bond angle due to Er 3+ /Yb 3+ doping.…”