Growth of Large-Area and Highly Crystalline MoS₂ Thin Layers on Insulating Substrates

Abstract

Highly crystalline and large-area MoS 2 thin layers with good electrical performance can be obtained by the post-annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur.

Solvent-Assisted Oxygen Incorporation of Vertically Aligned MoS2 Ultrathin Nanosheets Decorated on Reduced Graphene Oxide for Improved Electrocatalytic Hydrogen Evolution

“…This could be attributed to the fact that the GO can effectively prevent MoS 2 nanosheets from stacking during the hydrothermal process. 43,46 The peaks at 281 and 340 cm −1 can be identified as the B 2g and B 1g vibrational modes (Mo−O bonds), confirming the successful oxygen incorporation in the MoS 2 . 6 The characteristic peaks at 1342 and 1582 cm −1 for rGO in Figure 2c can be ascribed to D band (represents edges, disordered carbon and defects) and G band (corresponds to vibration of ordered sp 2 -hybrided carbon).…”

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

“…CVD‐grown graphene has made great breakthrough in the growth of large‐area graphene 17, 155, 156, 157, 158, 159, 160. Recently, the synthesis of 2DLMs via CVD methods has been illustrated in many reports especially for MoS 2 ,30, 31, 161, 162, 163, 164, 165, 166, 167, 168, 169, 170, 171, 172, 173, 174, 175, 176, 177, 178, 179, 180, 181, 182, 183, 184, 185 which also shows promising applications in electronics and optoelectronics. Up to now, there are several reports on synthesizing 2D GIVMCs nanoflakes via CVD method, which is still at the initial stage.…”

Ultrahigh, Ultrafast, and Self‐Powered Visible‐Near‐Infrared Optical Position‐Sensitive Detector Based on a CVD‐Prepared Vertically Standing Few‐Layer MoS2/Si Heterojunction

“…Additionally, monolayer or few‐layer MoS 2 can only absorb a small portion of incident light due to its ultrathin thickness, and its excellent optical absorption property cannot be well developed, thus restricting photocurrent (/photovoltage) improvement in MoS 2 ‐based devices. Therefore, recently, researchers have tried to prepare large‐scale uniform multilayer27 or bulk MoS 2 28 and have conceived a feasible and easy way to construct high‐performance optoelectronic devices by combining a 2D layered material with a traditional Si semiconductor,29, 30, 31, 32 as Si still dominates the commercial photovoltaic or optoelectronic market due to high abundance, acceptable power conversion efficiencies, and mature semiconductor technologies. Although the optical absorption can be improved greatly, the existing numerous defects result in serious recombination, and good PCEs still cannot be obtained 31, 32.…”