Growth of Large‐Area 2D MoS2(1‐x)Se2x Semiconductor Alloys

Feng, Qingliang; Zhu, Yiming; Hong, Jinhua; Zhang, Mei; Duan, Wenjie; Mao, Nannan; Wu, Juanxia; Xu, Hua; Dong, Fengliang; Lin, Fang; Jin, Chuanhong; Wang, Chunming; Zhang, Jin; Xie, Liming

doi:10.1002/adma.201306095

Cited by 376 publications

(357 citation statements)

References 38 publications

(40 reference statements)

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“…CVD‐grown graphene has made great breakthrough in the growth of large‐area graphene 17, 155, 156, 157, 158, 159, 160. Recently, the synthesis of 2DLMs via CVD methods has been illustrated in many reports especially for MoS 2 ,30, 31, 161, 162, 163, 164, 165, 166, 167, 168, 169, 170, 171, 172, 173, 174, 175, 176, 177, 178, 179, 180, 181, 182, 183, 184, 185 which also shows promising applications in electronics and optoelectronics. Up to now, there are several reports on synthesizing 2D GIVMCs nanoflakes via CVD method, which is still at the initial stage.…”

Section: Preparation Methods and Characterizationsmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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Section: Preparation Methods and Characterizationsmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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“…The substrates were placed in a cold zone at 650 • C [46]. Feng et al [52] have also reported the synthesis of uniformly distributed monolayer MoS 2(1−x) Se 2x alloys on SiO 2 /Si substrates through the direct evaporation of MoSe 2 [44], (d,e) adapted with permission from Li et al [45], (f ,g) adapted with permission from Wu et al [46] and (h) adapted with permission from Liu et al [47].…”

Section: Synthesis and Characterizationmentioning

confidence: 99%

Two-dimensional inorganic analogues of graphene: transition metal dichalcogenides

Jana¹,

Rao²

2016

Phil. Trans. R. Soc. A.

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The discovery of graphene marks a major event in the physics and chemistry of materials. The amazing properties of this two-dimensional (2D) material have prompted research on other 2D layered materials, of which layered transition metal dichalcogenides (TMDCs) are important members. Single-layer and few-layer TMDCs have been synthesized and characterized. They possess a wide range of properties many of which have not been known hitherto. A typical example of such materials is MoS 2 . In this article, we briefly present various aspects of layered analogues of graphene as exemplified by TMDCs. The discussion includes not only synthesis and characterization, but also various properties and phenomena exhibited by the TMDCs.This article is part of the themed issue 'Fullerenes: past, present and future, celebrating the 30th anniversary of Buckminster Fullerene'.

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“…[1][2][3][4][5] Owing to their high anisotropy and unique crystal structures, MX 2 can be utilized in a variety of energy conversion and storage applications, including water splitting cells, rechargeable batteries, supercapacitors, fuel cells, as well as various electronic and optoelectronic devices, etc. [6][7][8][9][10][11] Nanoengineering (morphology, size, number of layers, edges, defects), [12][13][14][15][16][17] phase conversion, [18][19][20][21][22][23] and composition tuning (alloying, doping with foreign transition metal), [24][25][26][27][28][29][30][31] represent the hot research areas in the recent past, aiming at modulation of the material properties and improvement of the device performances. Such impressive progress benefits from the success in synthesizing nanostructured MX 2 with precisely controlled parameters including edge density and crystalline phase.…”

Section: Introductionmentioning

confidence: 99%

Interlayer Nanoarchitectonics of Two‐Dimensional Transition‐Metal Dichalcogenides Nanosheets for Energy Storage and Conversion Applications

Zhang

et al. 2017

Advanced Energy Materials

331

253

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Lamellar transition‐metal dichalcogenides (MX2) have promising applications in electrochemical energy storage and conversion devices due to their two‐dimensional structure, ultrathin thickness, large interlayer distance, tunable bandgap, and transformable phase nature. Interlayer engineering of MX2 nanosheets with large specific surface area can modulate their electronic structures and interlayer distance as well as the intercalated foreign species, which is important for optimizing their performance in different devices. In this review, a summary on recent progress of MX2 nanosheets and the significance of their interlayer engineering is presented firstly. Synthesis of interlayer‐expanded MX2 nanosheets with various strategies is then discussed in detail. Emphasis is focused on their applications in rechargeable batteries, pseudocapacitors, hydrogen evolution reaction (HER) catalysis and treatments of environmental contaminants, demonstrating the importance of interlayer engineering on controlling performance of MX2. The current challenges of the interlayer‐expanded MX2 and outlooks for further advances are finally discussed.

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Growth of Large‐Area 2D MoS_2(1‐x)Se_2x Semiconductor Alloys

Cited by 376 publications

References 38 publications

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Two-dimensional inorganic analogues of graphene: transition metal dichalcogenides

Interlayer Nanoarchitectonics of Two‐Dimensional Transition‐Metal Dichalcogenides Nanosheets for Energy Storage and Conversion Applications

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