Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

Dhawan, Tanuj; Tyagi, Renu; Bag, Rajesh K.; Singh, M.; Mohan, Premila; Haldar, Toton; Murlidharan, R.; Tandon, R. P.

doi:10.1007/s11671-009-9439-y

“…Recent advanced epitaxial techniques with monolithic integration of GaAs on Ge substrates and InAs/GaAs QDs gain region have enabled the realization of PL emission of InAs/GaAs QDs on a Ge substrate. However, the emission wavelength was limited at ~1.1 µm below RT, and no laser was achieved [74,75]. One of the biggest challenges in such an effort was the formation of APBs when the typical procedure of using a self-terminating arsenide (As) layer was adopted for the initial GaAs layer grown on a Ge substrate, see Figure 7(a).…”

Section: Ge and Ge-on-si Substratesmentioning

confidence: 99%

III-V Quantum Dot Lasers Monolithically Grown on Silicon

Deng

¹

,

Li

²

,

Tang

³

et al. 2019

Optical Fiber Communication Conference (OFC) 2019

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The monolithic growth of III-V semiconductor lasers on Si remains the 'holy grail' for full-scale deployment of Si photonics with reduced cost and added flexibility. Further, semiconductor lasers with active regions made from quantum dots (QDs) have shown superior device performance over conventional quantum well (QW) counterparts and offer new functionalities. There are other advantages of QDs for monolithic III-V-on-Si integration over QWs, such as QD devices being less sensitive to defects. It is, therefore, not surprising that the past decade has seen rapid progress in research on monolithic III-V QD lasers on Si, with a view to leveraging the benefits of QD gain region technology while benefitting from the economics of scale enabled by monolithic growth. This review has a special focus on O-band III-V QD lasers monolithically grown on Si for Si photonic optical interconnects, including Fabry-Perot lasers, distributed-feedback laser array, and micro-lasers. The successes and challenges for developing monolithic III-V lasers on Si are discussed.attributed to the effective carrier localization in the self-assembled nanostructures and hence reduced probability of interaction with defects [26,27]. It is not surprising that QD lasers grown on Si have won an overwhelming victory over QW lasers grown on Si in many respects and demonstrated device performance and reliability that is comparable to lasers grown on native III-V substrates.The combined strengths of QD active region techniques and monolithic III-V-on-Si integration technology are poised to revolutionize Si photonics. In this review article, we summarise recent achievements for O-band III-V InAs QD lasers epitaxially grown on Si substrates and describes how QD technology has opened up new avenues in monolithic III-V-on-Si integration technology, enabling efficient and reliable Si-based lasers for Si photonics. This review starts with the challenges associated with the monolithic integration of III-Vs on Si substrates in Section 2, followed by discussion of the advantages of QD over QW structures for use in monolithic integration in Section 3. Section 4 focuses on the 1.3 µm InAs QDs lasers monolithically grown on Ge substrates, Ge-on-Si substrates, Si substrates with off-cut and on-axis Si (001) substrates. Section 5 describes monolithic QD distributed feedback laser arrays on Si substrates operating at O band. Before the Conclusion, Section 6 discusses 1.3 µm QD micro-lasers monolithically grown on Si substrates. Challenges for monolithic integrationThe idea of monolithic integration of III-V materials on Si platform is, of course, not a new topic. First attempts to growth GaAs thin films on Si substrates started in the 1980s [28,29] and continued in the 1990s with InP-based materials on Si, especially at NTT in Japan [30,31]. This approach, despite being investigated for decades, yielded little progress. This is because, unfortunately, monolithic III-V-on-Si integration poses critical issues stemming from the large material dissimilarity between III-V an...

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“…InAs/GaAs QDs gain region have enabled the realization of PL emission of InAs/GaAs QDs on a Ge substrate. However, the emission wavelength was limited at ~1.1 µm below RT, and no laser was achieved [74,75]. One of the biggest challenges in such an effort was the formation of APBs when the typical procedure of using a self-terminating arsenide (As) layer was adopted for the initial GaAs layer grown on a Ge substrate, see Figure 7(a).…”

Section: Recent Advanced Epitaxial Techniques With Monolithic Integramentioning

confidence: 99%

III–V quantum-dot lasers monolithically grown on silicon

Liao

¹

,

Chen

²

,

Park

³

et al. 2018

Semicond. Sci. Technol.

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The monolithic growth of III-V semiconductor lasers on Si remains the 'holy grail' for full-scale deployment of Si photonics with reduced cost and added flexibility. Further, semiconductor lasers with active regions made from quantum dots (QDs) have shown superior device performance over conventional quantum well (QW) counterparts and offer new functionalities. There are other advantages of QDs for monolithic III-V-on-Si integration over QWs, such as QD devices being less sensitive to defects. It is, therefore, not surprising that the past decade has seen rapid progress in research on monolithic III-V QD lasers on Si, with a view to leveraging the benefits of QD gain region technology while benefitting from the economics of scale enabled by monolithic growth. This review has a special focus on O-band III-V QD lasers monolithically grown on Si for Si photonic optical interconnects, including Fabry-Perot lasers, distributed-feedback laser array, and micro-lasers. The successes and challenges for developing monolithic III-V lasers on Si are discussed.

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“…As for the epitaxial growth of InAs QDs directly on Ge, InAs and InGaAs islands were grown on a 6 • offcut Ge (100) substrate by metalorganic vapour phase epitaxy. The highest island density achieved was 2.5 × 10 10 cm −2 and photoluminescence from the InAs islands was only observed when embedded in GaAs capping layers [8,9].…”

Section: Introductionmentioning

confidence: 98%

The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix

Jia

¹

,

Yang

²

,

Tang

³

et al. 2022

J. Phys. D: Appl. Phys.

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In this work, we investigated the epitaxial growth of InAs quantum dots (QDs) on Ge substrates. By varying the growth parameters of growth temperature, deposition thickness and growth rate of InAs, a high density of 1.2 ×1011 cm-2 self-assembled InAs QDs were successfully epitaxially grown on Ge substrates by solid-source molecular beam epitaxy (MBE) and capped by Ge layers. Pyramidal- and polyhedral-shaped InAs QDs embedded in Ge matrices were revealed, which are distinct from the lens- or truncated pyramid-shape dots in InAs/GaAs or InAs/Si systems. Moreover, with 200 nm Ge capping layer, one third of the embedded QDs are found with ellipse and hexagonal nanovoids with sizes of 7 – 9 nm, which is observed for the first time for InAs QDs embedded in a Ge matrix to the best of our knowledge. These results provide a new possibility of integrating InAs QD devices on Group-IV platforms for Si photonics.

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Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

Cited by 14 publications

References 27 publications

III-V Quantum Dot Lasers Monolithically Grown on Silicon

III-V Quantum Dot Lasers Monolithically Grown on Silicon

III–V quantum-dot lasers monolithically grown on silicon

The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix

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