Growth of III-nitrides by molecular beam epitaxy: Unconventional substrates for conventional semiconductors

Prajapat, Pukhraj; Singh, Deependra Kumar; Gupta, Govind

doi:10.1016/j.mseb.2023.116574

Cited by 7 publications

(1 citation statement)

References 89 publications

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“…RRAM still has limitations in achieving high computing power, low energy consumption, and ultrahigh storage density [10]. Researchers are actively exploring new materials to improve performance, reduce energy consumption, and create compact designs [11,12].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Sb₂S₃/Sb₂Se₃ heterostructure for potential resistive switching applications

Prajapat,

Vashishtha,

Goswami

et al. 2024

Nano Ex.

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The exponential growth of big data and the widespread adoption of the Internet of Things (IoT) have created significant challenges for traditional Von Neumann computers. These challenges include complex hardware, high energy consumption, and slow memory access times. Researchers are investigating novel materials and device architectures to address these issues by reducing energy consumption, improving performance, and enabling compact designs. A new study has successfully engineered a heterostructure that integrates Sb2Se3 and Sb2S3, resulting in improved electrical properties. This has generated significant interest in its potential applications in resistive switching. In this study, we have demonstrated the fabrication of a device based on Sb2S3/Sb2Se3 heterostructure that exhibits resistive switching behavior. The device has different resistance states that can be switched between high and low resistance levels when exposed to an external bias (-1V to 0V to 1V). It also has good non-volatile memory characteristics, including low power consumption, high resistance ratio (~102), and reliable endurance (~103). The device enables faster data processing, reduces energy consumption, and streamlines hardware designs, contributing to computing advancements amidst modern challenges. This approach can revolutionize resistive switching devices, leading to more efficient computing solutions for big data processing and IoT technologies.

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Section: Introductionmentioning

confidence: 99%

Fabrication of Sb₂S₃/Sb₂Se₃ heterostructure for potential resistive switching applications

Prajapat,

Vashishtha,

Goswami

et al. 2024

Nano Ex.

Self Cite

View full text Add to dashboard Cite

show abstract

Ultra-high conductivity exploration and applications with multilayer heterostructure in solid oxide fuel cells: A review

Wang,

Cui,

Yang

et al. 2024

Journal of Alloys and Compounds

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Thermal expansion of 4H and 6H SiC from 5 K to 340 K

Neumeier,

Shvyd’ko,

Haskel

2024

Journal of Physics and Chemistry of Solids

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Growth of III-nitrides by molecular beam epitaxy: Unconventional substrates for conventional semiconductors

Cited by 7 publications

References 89 publications

Fabrication of Sb₂S₃/Sb₂Se₃ heterostructure for potential resistive switching applications

Fabrication of Sb₂S₃/Sb₂Se₃ heterostructure for potential resistive switching applications

Ultra-high conductivity exploration and applications with multilayer heterostructure in solid oxide fuel cells: A review

Thermal expansion of 4H and 6H SiC from 5 K to 340 K

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Growth of III-nitrides by molecular beam epitaxy: Unconventional substrates for conventional semiconductors

Cited by 7 publications

References 89 publications

Fabrication of Sb2S3/Sb2Se3 heterostructure for potential resistive switching applications

Fabrication of Sb2S3/Sb2Se3 heterostructure for potential resistive switching applications

Ultra-high conductivity exploration and applications with multilayer heterostructure in solid oxide fuel cells: A review

Thermal expansion of 4H and 6H SiC from 5 K to 340 K

Contact Info

Product

Resources

About

Fabrication of Sb₂S₃/Sb₂Se₃ heterostructure for potential resistive switching applications

Fabrication of Sb₂S₃/Sb₂Se₃ heterostructure for potential resistive switching applications