2021
DOI: 10.1016/j.matpr.2021.04.543
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Growth of highly oriented orthorhombic phase of Bi2Fe4O9 thin films by pulsed laser deposition

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Cited by 4 publications
(6 citation statements)
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“…The range of wavelengths corresponds with 2-3 eV [79]. The photocatalytic [85,87] properties prove that the material has a lower bandgap potential [88], which is a considerable advantage, and make the material attractive for light detection sensors and photovoltaic application [88].…”
Section: Bismuth Mullite Materialsmentioning
confidence: 99%
See 1 more Smart Citation
“…The range of wavelengths corresponds with 2-3 eV [79]. The photocatalytic [85,87] properties prove that the material has a lower bandgap potential [88], which is a considerable advantage, and make the material attractive for light detection sensors and photovoltaic application [88].…”
Section: Bismuth Mullite Materialsmentioning
confidence: 99%
“…Bismuth ferrite is represented in two different structures: perovskite cell and Selenite material. Iron Selenite material (Bi25FeO40) [87,89] has been encountered during the synthesis of pure phase BFO material. Selenite draws a lot of attention nowadays due to its The photocatalytic [85,87] properties prove that the material has a lower bandgap potential [88], which is a considerable advantage, and make the material attractive for light detection sensors and photovoltaic application [88].…”
Section: Iron Selenite Materialsmentioning
confidence: 99%
“…However, the indirect charge transfer mechanism is thought to predominate at low room temperatures [35]. In the case of Bi 2 Fe 4 O 9 films, the optical band gap is in the range of 2.05-2.2 eV [36][37][38]. From the theoretical studies of density functional theory [37], the band gap of Bi 2 Fe 4 O 9 is considered to be indirect.…”
Section: Almentioning
confidence: 99%
“…In the case of Bi 2 Fe 4 O 9 films, the optical band gap is in the range of 2.05-2.2 eV [36][37][38]. From the theoretical studies of density functional theory [37], the band gap of Bi 2 Fe 4 O 9 is considered to be indirect. For the Bi 2 Fe 4 O 9 -BiFeO 3 sample, a band gap of 2.1 eV was observed [39].…”
Section: Almentioning
confidence: 99%
“…Chen et al using first principles studies on BiCoO 3 demonstrated that the polarization and magnetic properties of BiCoO 3 can be tuned by introducing oxygen vacancies or by applying strain to the crystal. Defects play a highly critical role in governing the electronic and magnetic properties of a material [10,11]. Particularly in multiferroics such as BiFeO 3 , Bi vacancies have been found to be responsible for p-type conduction whereas it behaves as an insulator in presence of O vacancies [12].…”
Section: Introductionmentioning
confidence: 99%