Growth of highly oriented iridium oxide bottom electrode for Pb(Zr,Ti)O3 thin films using titanium oxide seed layer

Trupina, L.; Miclea, C.; Amarande, L.; Cioangher, M.

doi:10.1007/s10853-011-5642-1

Cited by 12 publications

(7 citation statements)

References 13 publications

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“…Proper control of the crystalline texture allows an increase in the piezoelectric stress constant as demonstrated by Ledermann et al 12 who showed a nearly 60% increase in e 31,f for (100)-oriented PZT (52/48) compared with randomly oriented PZT (52/48). In recent years, there has been research on the optimization of PZT properties to suit the needs of specific device performance in the form of substrate optimizations, [13][14][15] the novel use of PZT nanowires, 16,17 as well as studies on the electrical properties of PZT composites. 18,19 Such improvements in piezoelectric properties result in substantial improvements in device performance including lower actuation voltages, higher force actuation, and lower power consumption.…”

Section: Introductionmentioning

confidence: 99%

Optimization of PbTiO₃ seed layers and Pt metallization for PZT-based piezoMEMS actuators

Sanchez

Potrepka

Fox³

et al. 2013

J. Mater. Res.

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This work attempts to optimize past research results on lead zirconate titanate (PZT) using the fabrication processes at the U.S. Army Research Laboratory so as to achieve a high degree of {001} texture and improved piezoelectric properties. A comparative study was performed between Ti/Pt and TiO 2 /Pt bottom electrodes. The results indicate that the use of a highly oriented {100} rutile phase TiO 2 led to highly textured {111} Pt which in turn improved both the PTO and PZT orientations. PZT (52/48) and (45/55) thin films with and without PTO seed layers were deposited and examined via x-ray diffraction (XRD) methods as a function of annealing temperature. The seed layer provides significant improvement in the {100} orientation generally, and in the {001} subset of planes specifically, while suppressing the {111} orientation of the PZT. Improvements in the Lotgering factor (f) were observed from an existing Ti/Pt/PZT process (f 5 0.66) to samples using the PTO seed layer deposited onto the improved Pt electrodes, TiO 2 /Pt/PTO/PZT (f 5 0.96).

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Section: Introductionmentioning

confidence: 99%

Optimization of PbTiO₃ seed layers and Pt metallization for PZT-based piezoMEMS actuators

Sanchez

Potrepka

Fox³

et al. 2013

J. Mater. Res.

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“…[5,[10][11][12] In PZT, oxygen vacancies were found to be a dominant source of performance instabilities. [2,13,14] The diffusion and generation of oxygen vacancies lead to cycling limitations and pinning of domains. Electric field cycling and the associated oxygen vacancy diffusion can lead to unpinning of domains and an increased remanent polarization.…”

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confidence: 99%

“…[13][14][15] In PZT, the reliability concerns can be drastically improved using IrO 2 as an electrode material. [2,16] IrO 2 supplies oxygen to annihilate intrinsic and generated oxygen vacancies in PZT films. [14] For PZT, Tagantsev et al suggested that oxide electrodes could provide better chemical compatibility and an improved interface.…”

mentioning

confidence: 99%

“…[1] Perovskite ferroelectric materials such as Pb(Zr,Ti)O 3 (PZT) and BaTiO 3 and their application in ferroelectric memory devices have been established and heavily investigated since the 1950s. [2,3] Despite the long development and experience with the perovskites, these materials suffer from limited scalability and complementary metal-oxide semiconductor (CMOS) technology compatibility issues. These problems can be overcome with HfO 2 -based ferroelectric materials.…”

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confidence: 99%

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Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf_0.5Zr_0.5O₂ Films

Mittmann

Szyjka

Alex

et al. 2021

Physica Rapid Research Ltrs

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Thin film metal–ferroelectric–metal capacitors with an equal mixture of hafnium oxide and zirconium oxide as the ferroelectric material are fabricated using iridium oxide as the electrode material. The influence of the oxygen concentration in the electrodes during crystallization anneal on the ferroelectric properties is characterized by electrical, chemical, and structural methods. Forming gas, O2, and N2 annealing atmospheres significantly change the ferroelectric performance. The use of oxygen‐deficient electrodes improves the stabilization of the ferroelectric orthorhombic phase and reduces the wake‐up effect. It is found that oxygen‐rich electrodes supply oxygen during anneal and reduce the amount of oxygen vacancies, but the nonferroelectric monoclinic phase is stabilized with a negative impact on the ferroelectric properties.

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“…Many researchers have found that doping metals into TiO 2 films enhances their photocatalytic activity and extends the absorption edge into the visible light region [107,133]. Metals can be doped into TiO 2 films using layer-by-layer [45,[134][135][136] and co-sputtering [57,137] methods. The co-sputtering method allows easy composition control and the layer-by-layer method yields higher quality thin films [136].…”

Section: Metal Oxide Dopingmentioning

confidence: 99%

A Review on the Pathways of the Improved Structural Characteristics and Photocatalytic Performance of Titanium Dioxide (TiO2) Thin Films Fabricated by the Magnetron-Sputtering Technique

Wang

Rahman

et al. 2020

Catalysts

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Titanium dioxide (TiO2) thin films are used for a broad range of applications such as wastewater treatment, photocatalytic degradation activity, water splitting, antibacterial and also in biomedical applications. There is a wide range of synthesis techniques for the deposition of TiO2 thin films, such as chemical vapor deposition (CVD) and physical vapor deposition (PVD), both of which are well known deposition methods. Layer by layer deposition with good homogeneity, even thickness and good adhesive nature is possible by using the PVD technique, with the products being used for photocatalytic applications. This review studies the effects of magnetron sputtering conditions on TiO2 films. This innovative technique can enhance the photocatalytic activity by increasing the thickness of the film higher than any other methods. The main purpose of this article is to review the effects of DC and RF magnetron sputtering conditions on the preparation of TiO2 thin films for photocatalysis. The characteristics of TiO2 films (i.e., structure, composition, and crystallinity) are affected significantly by the substrate type, the sputtering power, the distance between substrate and target, working pressure, argon/oxygen ratio, deposition time, substrate temperature, dopant types, and finally the annealing treatment. The photocatalytic activity and optical properties, including the degree of crystallinity, band gap (Eg), refractive index (n), transmittance (T), and extinction coefficient (k), of TiO2 films are dependent on the above- mentioned film characteristics. Optimal TiO2 films should have a small particle size, a strong degree of crystallinity, a low band gap, a low contact angle, a high refractive index, transmittance, and extinction coefficient. Finally, metallic and nonmetallic dopants can be added to enhance the photocatalytic activity of TiO2 films by narrowing the band gap.

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Growth of highly oriented iridium oxide bottom electrode for Pb(Zr,Ti)O3 thin films using titanium oxide seed layer

Cited by 12 publications

References 13 publications

Optimization of PbTiO₃ seed layers and Pt metallization for PZT-based piezoMEMS actuators

Optimization of PbTiO₃ seed layers and Pt metallization for PZT-based piezoMEMS actuators

Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf_0.5Zr_0.5O₂ Films

A Review on the Pathways of the Improved Structural Characteristics and Photocatalytic Performance of Titanium Dioxide (TiO2) Thin Films Fabricated by the Magnetron-Sputtering Technique

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Growth of highly oriented iridium oxide bottom electrode for Pb(Zr,Ti)O3 thin films using titanium oxide seed layer

Cited by 12 publications

References 13 publications

Optimization of PbTiO3 seed layers and Pt metallization for PZT-based piezoMEMS actuators

Optimization of PbTiO3 seed layers and Pt metallization for PZT-based piezoMEMS actuators

Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf0.5Zr0.5O2 Films

A Review on the Pathways of the Improved Structural Characteristics and Photocatalytic Performance of Titanium Dioxide (TiO2) Thin Films Fabricated by the Magnetron-Sputtering Technique

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About

Optimization of PbTiO₃ seed layers and Pt metallization for PZT-based piezoMEMS actuators

Optimization of PbTiO₃ seed layers and Pt metallization for PZT-based piezoMEMS actuators

Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf_0.5Zr_0.5O₂ Films