GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER

Abstract

InN film with an AlInN/AlN bilayer buffer was deposited on Si(111) substrate by radio frequency (RF) magnetron sputtering. X-ray diffraction and Raman spectroscopy measurements reveal that the InN film is of hexagonal wurtzite crystal structure with highly (0002) preferred orientation. An Al0.24In0.76N interface layer of about ~50 nm was confirmed by transmission electron microscopy (TEM) and further analyzed by X-ray photoelectron spectroscopy (XPS). The quality of this film is remarkably better than InN films grown directly on Si substrate or with only an AlN buffer, due to the effective accommodation of mismatch between the film and substrate. Our results will be very useful in the fabrication of applicable nitride microelectronic materials.