Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane

Yasui, Kanji; Asada, Kunio; Maeda, Toshinari; Ariga, Tadashi

doi:10.1016/s0169-4332(01)00109-x

Cited by 40 publications

(27 citation statements)

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“…Another reason for the production of chlorosilanes is considered to be the chemical reaction in the gas phase between SiH 3 and HCl and between Si 2 H 6 and HCl, as described in Eqs. (6) and (8), respectively. Because chloromethylsilanes are simultaneously observed, monomethylsilane is considered to react with hydrogen chloride, as shown in Eq.…”

Section: Article In Pressmentioning

confidence: 99%

“…Here, methylsilanes, such as monomethylsilane and dimethylsilane, are expected to allow lower temperature silicon carbide film formation than the ordinary technique using silane and hydrocarbon gases, such as propane [2,3], because methylsilanes have a covalent bond between the silicon and carbon in its molecular structure. Thus, many researchers have studied silicon carbide film formation technology using monomethylsilane gas [4][5][6][7][8][9][10][11][12], as well as dimethylsilane [13].…”

Section: Introductionmentioning

confidence: 99%

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Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases

Habuka¹,

Watanabe²,

Miura³

et al. 2007

Journal of Crystal Growth

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Section: Article In Pressmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases

Habuka¹,

Watanabe²,

Miura³

et al. 2007

Journal of Crystal Growth

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“…Because of the high vapor pressure of Si at such a high temperature [6], structural damage and the formation of voids are liable to occur at the interface between SiC and Si. In our previous study of the experiments by triode plasma CVD [7], H radicals generated in the RF plasma were considered to enhance the crystal growth at low temperatures through the extraction of H atoms and excessive methyl groups from source molecules on the growing film surface. Therefore, lowering the epitaxial growth temperature of SiC is of crucial importance in fabricating devices such as hetero-bipolar transistors using a SiC/Si structure.…”

Section: Introductionmentioning

confidence: 99%

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO²

et al. 2005

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The crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO 2 /Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750˚C and at a mesh temperature of 1600˚C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO 2 /Si substrates was determined to be achieved at substrate temperatures of 750-800˚C, while polycrystalline SiC films, at substrate temperatures above 850˚C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

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“…[1][2][3][4][5][6][7][8][9] Single crystalline epitaxial cubic SiC films on Si͑100͒ substrates have been grown at temperature as low as Tϭ750 C using methylsilane. [1][2][3][4][5][6][7][8][9] Single crystalline epitaxial cubic SiC films on Si͑100͒ substrates have been grown at temperature as low as Tϭ750 C using methylsilane.…”

Section: Introductionmentioning

confidence: 99%

Dissociative chemisorption of methylsilane on the Si(100) surface

Silvestrelli

Sbraccia

Ancilotto

2002

The Journal of Chemical Physics

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The chemisorption of methylsilane on the Si(100) surface is studied from first principles. Methylsilane is found to chemisorb dissociatively; during SiC film synthesis using methylsilane the dissociation of the molecule can take place either before or during interaction with the Si(100) surface. In the latter case we suggest a possible dissociation reaction pathway involving the scission of a Si-H bond, while preserving instead the Si-C bond. We investigate the geometry, the energetics, and the vibrational properties of a number of possible configurations following dissociative chemisorption and compare our results with recent experimental data. Finally, the results of a molecular dynamics simulation, aimed at qualitatively describing the process of heating methylsilane on Si(100), are reported. (C) 2002 American Institute of Physics

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Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane

Cited by 40 publications

References 5 publications

Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases

Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO²

Dissociative chemisorption of methylsilane on the Si(100) surface

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Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane

Cited by 40 publications

References 5 publications

Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases

Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

Dissociative chemisorption of methylsilane on the Si(100) surface

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Product

Resources

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Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO²