Growth of high-quality polycrystalline GaN on glass substrate by gas source molecular beam epitaxy

Tampo, Hitoshi; Asahi, H.; Imanishi, Yasuo; Hiroki, Masanobu; Ohnishi, K.; Yamada, K.; Asami, K.; Gonda, S.

doi:10.1016/s0022-0248(01)00740-0

Cited by 16 publications

(12 citation statements)

References 11 publications

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“…With further increasing the growth time of the LT buffer layer, the 3.42 eV PL peak was dominant again and stronger. It was reported that the 3.42 eV peak is due to defect related transition [7,8], so the 10 min LT buffer layer growth was the best condition. The PL peak near 3.33 eV was considered to be LO phonon replica of the peak at 3.42 eV.…”

Section: Resultsmentioning

confidence: 99%

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Ammonia Source MBE Growth of Polycrystalline GaN p-n Junction

Tampo

Yamada

Ohnishi

et al. 2001

phys. stat. sol. (a)

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We study the ammonia source molecular beam epitaxy growth of polycrystalline GaN on quartz glass substrates, and fabricate p–n diodes. Using an ammonia source, the grain size of polycrystalline GaN becomes larger than that of the ECR source growth and PL intensity is much stronger. Undoped polycrystalline GaN shows high resistivty. The n‐type and p‐type polycrystalline GaN layers are obtained by Si and Mg dopants, respectively. Carrier concentrations obtained are 2.2 × 10—17 to 8.8 × 10—17 cm—3 for n‐type layers and 7.1 × 10—17 cm—3 for p‐type layers. We fabricate polycrystalline GaN p–n junction and confirm the rectifying characteristics.

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Section: Resultsmentioning

confidence: 99%

“…This means that the carrier concentration of undoped GaN grown under the optimised condition was below 10 17 cm --3 . In the ECR-MBE growth, undoped polycrystalline GaN showed also high resistivity [9]. It is known that high purity polycrystalline semiconductors act like insulator.…”

Section: Resultsmentioning

confidence: 99%

Ammonia Source MBE Growth of Polycrystalline GaN p-n Junction

Tampo

Yamada

Ohnishi

et al. 2001

phys. stat. sol. (a)

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“…Discussion GaN polycrystalline layers deposited on sapphire exhibits very strong luminescence with an intensity higher than MOVPE layers [2]. HREM analysis confirms the high quality of these layers containing stacking faults and inversion domain boundaries.…”

Section: Resultsmentioning

confidence: 69%

“…For the second, #G, 730 C, the main peak is shifted towards the highest energies: 3.43 eV and the FWHM is broader, 161.1 meV. Previous analysis of these spectra has shown that sample #A is typically characterised by free excitons with an activation energy of 24 meV whereas #G could be governed by excitons bound to structural defects or by a lower energy band tail due to the microstructure of the layers [2].…”

Section: Resultsmentioning

confidence: 91%

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Polycrystalline GaN: Analysis of the Defects

Nouet

Ruterana

Tampo

et al. 2002

phys. stat. sol. (c)

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PACS: 68.37. Lp; 68.55.Ln; 78.55.Cr GaN polycrystalline layers were grown by ECR molecular beam epitaxy on quartz glass substrate. Strong photoluminescence emission was observed. Analysis of these layers was carried out by high resolution transmission electron microscopy. It is shown that the microstructure is characterised by a columnar growth with the h0001i direction parallel to the growth direction. The mean size of the grains is in the range 30-50 nm. Sphalerite, cubic, and wurtzite, hexagonal, phases are observed, thus some defects such as basal stacking faults are present. Inversion domain boundaries are also formed. However, no threading dislocations within the grains are visible.Introduction III-V nitride semiconductors (GaN, AlN, InN) and their alloys are characterised by a direct band gap in the range of 1 to 6.2 eV making them excellent candidates for a number of optoelectronic applications. These possibilities have led to the commercialisation of devices emitting from red to ultraviolet: electroluminescent and laser diodes. Layers of these nitrides grown on various substrates, mainly on sapphire and silicon carbide, contain a very high density of defects: threading dislocations, stacking faults, inversion domain boundaries. Improvements have been obtained by epitaxial lateral overgrowth with a density of threading dislocations as low as 10 5 cm

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Synthesis and characterization of silicon-doped polycrystalline GaN films by r.f. sputtering

Gupta

2015

Bull Mater Sci

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Silicon-doped polycrystalline GaN films were successfully deposited at temperatures ranging from 300 to 623 K on fused silica and silicon substrates by radio frequency (r.f.) magnetron sputtering at a system pressure of ~ 5 Pa. The films were characterized by optical as well as microstructural measurements. The optical properties were studied by UV-vis-NIR spectrometer and photoluminicence (PL) measurements. The microstructural information was obtained from scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM) and X-ray diffraction (XRD) studies. PL measurement at 80 K exhibited two strong transitions located at ~ 2.1 and ~ 2.7 eV along with lower intensity peaks for luminescence at the higher energy side at ~ 3.45 and ~ 3.3 eV for all the films deposited here, and the peaks at ~ 3.45 and ~ 3.3 eV could be ascribed to transitions related to excitons bound to a neutral donor for h-GaN and c-GaN, respectively. A broad peak at ~ 2.1 eV indicated the presence of yellow luminescence in all the films. The SEM and AFM images revealed that the films are compact with well-dispersed polycrystalline constituting the films. The XRD traces contained the signature of both the hexagonal and cubic phases of GaN.

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Growth of high-quality polycrystalline GaN on glass substrate by gas source molecular beam epitaxy

Cited by 16 publications

References 11 publications

Ammonia Source MBE Growth of Polycrystalline GaN p-n Junction

Ammonia Source MBE Growth of Polycrystalline GaN p-n Junction

Polycrystalline GaN: Analysis of the Defects

Synthesis and characterization of silicon-doped polycrystalline GaN films by r.f. sputtering

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