Growth of high crystal quality InN by ENABLE‐MBE

Abstract

Indium nitride is of interest as a small band gap material for hot carrier solar cells and for alloying of III‐Nitrides in conventional solar cells. Growth of photovoltaic device quality InN on cost effective sapphire wafers is challenging. Lattice mismatch between sapphire and indium nitride (∼25%) makes growth of epitaxial crystals with low crystalline imperfection problematic. InN films with promising XRD results were grown by MBE using a well‐aligned AlN buffer layer to grow InN on sapphire substrates. Crystal quality, analyzed by HRXRD, gives evidence that films of both AlN on sapphire and InN on AlN are almost fully relaxed by edge dislocations created on the interfaces with a rather low density of closed dislocation loops, created subsequently in the film volume of both epitaxial layers. These films exhibit threading dislocation densities of 3 x 107 cm‐2 and 2 × 108 cm‐2 for AlN and InN. Additional metrics quantifying film quality of AlN and InN characterized by XRD and TEM will be presented. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)

“…This provides a significant advantage to III-nitride family for the optoelectronic device applications such as full-color light-emitting diodes and highly efficient multi-junction solar cells. 6,7 Significant progress has been made in the growth of hexagonal InN by different growth methods and among them, the most prominent methods are molecular beam epitaxy (MBE), [8][9][10][11][12][13] metal organic vapor phase epitaxy (MOVPE), 14 high-pressure chemical vapour deposition (HP-CVD), 15,16 sputtering, [17][18][19][20] migration enhanced afterglow, 21 and pulsed laser deposition. 22 InN has a relatively low decomposition temperature and possesses high nitrogen equilibrium vapor pressure.…”

High growth speed of gallium nitride using ENABLE-MBE

“…The expansion from this nozzle passes through several apertures and is introduced into the main growth chamber. This creates a beam of neutral nitrogen atoms with kinetic energies tunable from 0.5 to 3.0 eV [6].…”