Growth of Hg&lt;SUB align=right&gt;1-xCd&lt;SUB align=right&gt;xTe nanostructures by molecular beam epitaxy with ellipsometric control

Михайлов, Н. Н.; Smirnov, R. N.; Dvoretsky, S. A.; Sidorov, Yu. G.; Швец, В. А.; Спесивцев, Е. В.; Rykhlitski, S.V.

doi:10.1504/ijnt.2006.008725

Cited by 117 publications

(69 citation statements)

References 13 publications

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“…Our samples with HgTe quantum wells were realized on the basis of HgTe/Hg 1−x Cd x Te (x = 0.55 − 0.65) heterostructures grown by molecular beam epitaxy on GaAs substrate with the (013) surface orientation [16]. The samples were mesa etched into standard Hall bars of 0.5 mm width and the distance between the potential probes of 0.5 mm.…”

Section: Methodsmentioning

confidence: 99%

Spin-orbit splitting of valence and conduction bands in HgTe quantum wells near the Dirac point

et al. 2016

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Energy spectra both of the conduction and valence bands of the HgTe quantum wells with a width close to the Dirac point were studied experimentally. Simultaneous analysis of the Shubnikov-de Haas oscillations and Hall effect over a wide range of electron and hole densities gives surprising result: the top of the valence band is strongly split by spin-orbit interaction while the splitting of the conduction band is absent, within experimental accuracy. Astonishingly, but such a ratio of the splitting values is observed as for structures with normal spectrum so for structures with inverted one. These results do not consistent with the results of kP calculations, in which the smooth electric filed across the quantum well is only reckoned in. It is shown that taking into account the asymmetry of the quantum well interfaces within a tight-binding method gives reasonable agreement with the experimental data.

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Section: Methodsmentioning

confidence: 99%

Spin-orbit splitting of valence and conduction bands in HgTe quantum wells near the Dirac point

et al. 2016

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“…The details of the structure growth process are described in [8,9]. The QW cross-section and the energy diagram of the structures investigated is shown in Fig.3a and 1b, respectively.…”

Section: Experiments Samplesmentioning

confidence: 99%

The effect of electron-hole scattering on transport properties of a 2D semimetal in the HgTe quantum well

Éntin

Magarill

Olshanetsky

et al. 2013

J. Exp. Theor. Phys.

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The influence of e-h scattering on the conductivity and magnetotransport of 2D semimetallic HgTe is studied both theoretically and experimentally. The presence of e-h scattering leads to the friction between electron and holes resulting in a large temperature-dependent contribution to the transport coefficients. The coefficient of friction between electrons and holes is determined. The comparison of experimental data with the theory shows that the interaction between electrons and holes based on the long -range Coulomb potential strongly underestimates the e-h friction. The experimental results are in agreement with the model of strong short-range e-h interaction.

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“…Rzhanov Institute of Semiconductor Physics (Novosi− birsk, Russia). The details of the growth procedure can be found elsewhere [18]. The growth cycle was carried out without exposing the substrate and buffer layers to ambient atmosphere, and was controlled by means of an automatic ellipsometer.…”

Section: Methodsmentioning

confidence: 99%

Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs

Іжнін¹,

Izhnin²,

Mynbaev³

et al. 2013

Opto-Electronics Review

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Photoluminescence (PL) of HgCdTe-based hetero-epitaxial nanostructures with 50 to 1100 nm-wide potential wells was studied. The nanostructures were grown by molecular beam epitaxy on GaAs substrates. A strong degree of alloy disorder was found in the material, which led to the broadening of the PL spectra and a considerable Stokes shift that could be traced up to temperature T∼230 K. Annealing of the structures improved the ordering and led to the increase in the PL intensity. A remarkable feature of the PL was an unexpectedly small decrease of its intensity with temperature increasing from 84 to 300 K. This effect can be related to localization of carriers at potential fluctuations and to the specific character of Auger-type processes in HgCdTe-based nanostructures.

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Growth of Hg<SUB align=right>1-xCd<SUB align=right>xTe nanostructures by molecular beam epitaxy with ellipsometric control

Cited by 117 publications

References 13 publications

Spin-orbit splitting of valence and conduction bands in HgTe quantum wells near the Dirac point

Spin-orbit splitting of valence and conduction bands in HgTe quantum wells near the Dirac point

The effect of electron-hole scattering on transport properties of a 2D semimetal in the HgTe quantum well

Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs

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