Growth of GaSb layers on GaAs (0 0 1) substrate by molecular beam epitaxy

Hao, Ruiting; Xu, Yingqiang; Zhou, Zhiqiang; Ni, Haiqiao; He, Zhenhong; Niu, Zhichuan

doi:10.1088/0022-3727/40/4/025

Cited by 20 publications

(10 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Due to the stronger PL intensity and absolutely straight monoatomic terraces on AFM image, the parameters employed for the deposition of sample #5 were chosen as optimal for the growth of the GaSb material: growth rate of 1.0 Å/s, growth temperature of 520 °C and V/III = 3.5. Relatively small GaSb growth rate of 0.7 Å/s is considered to be optimal also by other authors [22]. They claim that optimal growth is simultaneously slow (a) 2D mode, #5 sample (b) 2D mode with pyramids, #11 sample enough to provide mobility of Ga atoms and fast enough to prohibit them to reach the low-energetic sites around the defects.…”

Section: Optimization Of Gasb Growthmentioning

confidence: 91%

Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system

et al. 2018

View full text Add to dashboard Cite

A comprehensive investigation of the interfacial misfit (IMF) array formation has been carried out. The studies were based on the static phase diagram for GaAs (001) surface and As 2 dimers on the surface. Prior to the initiation of the GaSb growth two attempts of the temperature decreasing were performed: before and after the GaAs termination. The GaAs was grown in the optimal conditions for GaSb material. The influence of the interruption time on GaSb/GaAs heterostructure parameters was examined. Two cases were investigated: with and without Sb-soaking of the GaAs surface. The periodic array of edge dislocations at GaSb/GaAs interface was confirmed using Burger's circuit theory. Careful examination of misfit surroundings revealed one uncompleted Burger's vector that indicated one dislocation of mixed type among eight of the edge type. The distance between lattice sites of dislocations was 5.51 nm on average. The crystal quality of 5.0 µm GaSb layer was characterized by FWHM 2θ/ω = 42 arcsec, FWHM RC = 125 arcsec. The EPD = 4 × 10 6 cm − 2 was estimated after etching in FeCl 3 :HCl solution. The Δq z /Δq x ratio of 0.60 for 5.0 µm GaSb layer was higher than for 2.5 µm GaSb layer of 0.59. The probable reason was the thickness-dependent 60° dislocation density. The electrical parameters measured for 2.5 µm GaSb were: p = 4.0 × 10 16 cm −3 (2.0 × 10 16 cm −3 ) and µ = 599 cm 2 /V s (3420 cm 2 /V s) at 300 K (77 K).

show abstract

Section: Optimization Of Gasb Growthmentioning

confidence: 91%

Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system

et al. 2018

View full text Add to dashboard Cite

show abstract

“…In this experiment, we still use GaSb as the buffer, but before the growth of the GaSb buffer layer, an AlSb nucleation layer was deposited. 9 The GaSb/AlSb SLs buffer was grown above the AlSb nucleation layer. 200 period 2ML/8ML and 8ML/8ML InAs/GaSb SLs were grown on top of the GaSb buffer layer at a substrate temperature of about 410±10℃ measured by a standard thermocouple and calibrated with the (1×3) to (2×5) GaSb surface reconstruction transition.…”

Section: Growth and Characterizationmentioning

confidence: 99%

Growth and characterization of short-period InAs/GaSb superlattice photoconductors

Guo

Sun

et al. 2008

SPIE Proceedings

Self Cite

View full text Add to dashboard Cite

The short-and mid-wavelength infrared detectors based on short period type II superlattices (SLs) InAs (2ML) / GaSb (8ML) and InAs (8ML) / GaSb (8ML) were grown by molecular-beam epitaxy on semi-insulating GaAs substrates. An interfacial misfit mode AlSb quantum dot layer and a thick GaSb layer were grown as buffer layers. Room-temperature optical transmittance spectra showed clear absorption edge at ~2µm and ~5µm. The 50% cutoff wavelength of the two photoconductors was 2.1µm and 5.05µm in photoresponse at 77K respectively. The blackbody detectivity was beyond 2×10 8 cmHz 1/2 /W at 77K and 1×10 8 cmHz 1/2 /W at room temperature with 8 V/cm bias.

show abstract

“…Strain energy can be accommodated by misfit dislocations at the GaAs/GaSb interface. This results in the propagation of threading dislocations through the epilayers [4]. Thus, the growth of undoped high-quality GaSb/AlGaSb layers on GaAs substrate becomes a necessary process for preparing thin layers.…”

Section: Introductionmentioning

confidence: 99%

Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition

Ramelan

Harjana

Arifin

2010

Advances in Materials Science and Engineering

View full text Add to dashboard Cite

EpitaxialAlxGa1-xSb layers on GaAs substrate have been grown by atmospheric pressure metalorganic chemical vapour deposition using TMAl, TMGa, and TMSb. We report the effect of V/III flux ratio and growth temperature on growth rate, surface morphology, electrical properties, and composition analysis. A growth rate activation energy of 0.73 eV was found. For layers grown on GaAs at 580∘C and 600∘C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580∘C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology and its hole mobility and carrier concentration are equal to 237 cm2/V.s and 4.6 × 1017 cm-3, respectively, at 77 K. The net hole concentration of unintentionally doped AlGaSb was found to be significantly decreased with the increased of aluminium concentration. All samples investigated show oxide layers (Al2O3,Sb2O3, andGa2O5) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. Carbon content on the surface was also very high.

show abstract

Growth of GaSb layers on GaAs (0 0 1) substrate by molecular beam epitaxy

Cited by 20 publications

References 14 publications

Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system

Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system

Growth and characterization of short-period InAs/GaSb superlattice photoconductors

Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition

Contact Info

Product

Resources

About