Growth of GaN Thin Films on Silicon Using Single Source Precursors and Development of New Patterning Technology by Combination of MOCVD and Micro‐Contact Printing Methods
Abstract:PACS : 68.55.Jk; 81.15.Gh We have grown the GaN thin films on silicon substrates using the newly developed single source precursors by thermal MOCVD method. Highly oriented GaN thin films in the [002] direction with hexagonal structure were deposited on Si(111) substrates at 800 C and 1 Torr with Triazido(triphenylphosphine oxide) gallium. XRD pattern and pole-figure analysis proved that the highly oriented GaN film has a single-crystalline nature. PL data of this film show that a strong emission peak but w… Show more
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