Growth of GaN on sputtered GaN buffer layer via low cost and simplified sol–gel spin coating method

Fong, C. Y.; Ng, Sha Shiong; Yam, F.K.; Hassan, H. Abu; Hassan, Z.

doi:10.1016/j.vacuum.2015.04.042

Cited by 23 publications

(6 citation statements)

References 25 publications

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“…where B is the bulk modulus (B = 200 GPa) and v is the Poisson ratio (v = 0.23) [10]. The εzz is the relative strain of the c-axis in the sample and can be expressed as:…”

Section: Resultsmentioning

confidence: 99%

UV Photodetector Based on Mg-Doped GaN Thin Films Prepared by Sol-Gel Spin Coating

Nurfahana

2019

SSP

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In this work, sol-gel spin coated of magnesium (Mg) doped gallium nitride (GaN) thin films grown on AlN sapphire substrate was reported. The structural, lattice vibrational, and electrical properties of the deposited films were investigated and compared. X-ray diffraction results show that the deposited films composed of wurtzite structure with preferred orientation of GaN(002). The Raman active phonon modes correspond to the E2(high) and A1(LO) at 568 cm-1 and 733 cm-1 phonon modes of the hexagonal GaN were observed, while a broad peak attributed to the Mg-related lattice vibrational mode was detected at 669 cm-1. The Raman phonon modes were detected by using Raman spectroscopy. Hall effects results show that the resistivity, carrier concentration, and hall mobility of the Mg-doped GaN film was 0.1397 Ω cm, 1.77 × 1018 cm3, and 6.04 cm2/Vs, respectively. Besides, the characteristics of the ultraviolet (UV) photoresponse of the fabricated detector were investigated. The current-voltage characteristics of the Mg-doped GaN UV photodetector exhibits Schottky behaviour. The current-voltage measurements were carried out at room temperature with a computer-controlled integrated Source Meter (Keithley 2400). Lastly, the ideality factor and Schottky barrier heights were calculated using thermionic emission theory.

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“…where B is the bulk modulus (B = 200 GPa) and v is the Poisson ratio (v = 0.23) [10]. The εzz is the relative strain of the c-axis in the sample and can be expressed as:…”

Section: Resultsmentioning

confidence: 99%

UV Photodetector Based on Mg-Doped GaN Thin Films Prepared by Sol-Gel Spin Coating

Nurfahana

2019

SSP

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“…Buffer layers such as ZnO, TiC, and AlN are alternatively used to grow HVPE-GaN on the sapphire substrate without utilizing MOVPE growth; however, their buffer layers require processes other than HVPE. [18][19][20][21][22][23][24] In other words, high-quality GaN substrates using only HVPE have not yet been realized. The purpose of this study was to grow GaN directly on the sapphire substrate using only HVPE to achieve high-quality, low-cost, and large-diameter GaN substrates.…”

Section: Introductionmentioning

confidence: 99%

Direct growth of GaN on sapphire substrate via polarity transition from N- to Ga-polar using only hydride vapor phase epitaxy

Misaku¹,

Tanigawa²,

Okada³

et al. 2021

Jpn. J. Appl. Phys.

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We established a method for directly growing the GaN layer on a sapphire substrate using only hydride vapor phase epitaxy (HVPE). The important factors that affect the manufacture of high-quality, low-cost, and large-diameter GaN substrates require a growth method that does not utilize either a GaN template or processes other than HVPE. N2 carrier gas and a high temperature are important growth parameters required to achieve the direct growth of the GaN layer on the sapphire substrate. The mechanism of the direct growth of the GaN layer on the sapphire substrate reveals that the N-polar GaN layer grows during the initial growth stage via the nitridation of the sapphire substrate and Ga-polar GaN is subsequently produced via polarity inversion. Furthermore, the dislocation density of the GaN layer directly grown on the sapphire substrate is lower than that of the GaN layer grown on a GaN template using metal-organic vapor phase epitaxy.

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“…These devices can be a high-power transistor [16,17], optical device with a short wavelength [18], photo-detector [19], light emitting diode (LED) device [20][21][22], solar cell [23,24], pH sensor [25] and betavoltaic device [26]. Many thin film deposition techniques can be used to grow high-quality GaN thin films including pulsed laser deposition [27], metal-organic chemical vapour deposition [28], atomic layer deposition [29], molecular beam epitaxy (MBE) [30], thermionic vacuum arc [31,32], sputtering [33] and sol-gel [34]. Radio frequency (RF) magnetron sputtering has emerged as a useful method for producing high-quality GaN thin films at lower temperature [35].…”

Section: Introductionmentioning

confidence: 99%

Power-dependent physical properties of $$\mathbf{GaN}$$ thin films deposited on sapphire substrates by RF magnetron sputtering

Mantarcı

Kundakçı

2019

Bull Mater Sci

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Gallium nitride (GaN) thin films were grown on the Al 2 O 3 (0001) substrate using radio frequency (RF) magnetron sputtering under various RF powers. Many experimental techniques were used for investigating the effects of RF power on the GaN thin film growth and its physical properties. The X-ray diffraction results confirmed that the GaN thin film had a polycrystalline structure with planes of (101) and (202). The structural parameters of the thin film changed with RF powers. It was also found that the optical band gap energy of GaN thin films varied with changing RF power. From the atomic force microscopy images, almost homogeneous, nanostructured and a low-rough surface of the GaN thin film can be observed. From scanning electron microscopy analysis, dislocations and agglomerations were observed in some regions of the surface of the GaN thin film. E 2 (high) optical phonon mode of GaN was observed, proving the hexagonal structure of the thin film. The residual stress in the GaN thin films was calculated from Raman measurements. Furthermore, an agreement between the experimental measurements was also examined. The morphological, structural and optical properties of the GaN thin film could be improved with altering RF power. These films could be used in devices such as light emitting diodes, solar cells and diode applications.

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Growth of GaN on sputtered GaN buffer layer via low cost and simplified sol–gel spin coating method

Cited by 23 publications

References 25 publications

UV Photodetector Based on Mg-Doped GaN Thin Films Prepared by Sol-Gel Spin Coating

UV Photodetector Based on Mg-Doped GaN Thin Films Prepared by Sol-Gel Spin Coating

Direct growth of GaN on sapphire substrate via polarity transition from N- to Ga-polar using only hydride vapor phase epitaxy

Power-dependent physical properties of $$\mathbf{GaN}$$ thin films deposited on sapphire substrates by RF magnetron sputtering

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