Growth of GaN Layer on Patterned Al/Ti Metal Mask by Metal–Organic Chemical Vapor Deposition

Park, Jinsub; Moon, Daeyoung; Park, Sehun; Park, Sung Hyun; Yoon, Euijoon

doi:10.1143/jjap.51.025501

Cited by 2 publications

(1 citation statement)

References 16 publications

(16 reference statements)

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“…There are, however, issues in fabricating GaN-based devices because GaN is a binary compound. 5) In particular, plasma-induced damage of GaN, which causes surface roughening and/or spatial disorder, is a critical issue in the dry etching process. 6) The plasmainduced damage eventually results in degradation of GaNbased device characteristics.…”

Section: Introductionmentioning

confidence: 99%

Comparison between Damage Characteristics of p- and n-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas

Kawakami¹,

Niibe²,

Nakano³

et al. 2013

Jpn. J. Appl. Phys.

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Damage characteristics of p-GaN surfaces etched by capacitively coupled radio frequency Ar plasma at various gas pressures have been studied in terms of the ultraviolet (UV) light irradiation effect. The UV light corresponding to Ar II is emitted from the plasma at high gas pressures from 50 to 100 mTorr, whereas no UV light is emitted at a low gas pressure of 10 mTorr. The result of the etched p-GaN surface is compared with that of the etched n-GaN surface. The difference between the results of the p- and n-GaN surfaces depends strongly on the gas pressure. Both the experimental N/Ga ratios at the p- and n-GaN surfaces etched at the low gas pressure decrease with increasing etching time. The decreases in the experimental N/Ga ratios agree with the simulation results that N atoms at the p- and n-GaN surfaces are preferentially removed by Ar+ ions. The morphologies of the p- and n-GaN surfaces etched at the low gas pressure are similar to those of the as-grown surfaces. The damage characteristic of the p-GaN surface induced in the absence of the UV light irradiation also appears at the high gas pressures, although the p-GaN surfaces etched at the high gas pressures are irradiated with the emitted UV light. In contrast, both the experimental N/Ga ratios and morphologies of the n-GaN surfaces etched at the high gas pressures change with increasing etching time. The changes in the n-GaN surfaces probably result from the UV light irradiation.

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Section: Introductionmentioning

confidence: 99%

Comparison between Damage Characteristics of p- and n-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas

Kawakami¹,

Niibe²,

Nakano³

et al. 2013

Jpn. J. Appl. Phys.

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A review of key technologies for epitaxy and chip process of micro light-emitting diodes in display application

Pan¹,

Chen²,

Jiao³

et al. 2020

Acta Phys. Sin.

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The continuous miniaturization and integration of pixelated devices have become a main trend in the field of display. Micro light-emitting diode (micro-LED) display is composed of an array of LEDs that are sub-50-micrometers in length. It has huge advantages in brightness, resolution, contrast, power consumption, lifetime, response speed and reliability compared with liquid crystal display (LCD) and organic LED (OLED) display. Consequently, micro-LED display is regarded as the next-generation display technology with high potential applications, such as virtual reality (VR), augmented reality (AR), mobile phones, tablet computers, high-definition TVs and wearable devices. Currently, the combination of commercial 5G communication technology with VR/AR display, ultra high definition video technologies will further prompt the development of micro-LED display industry. However, some basic scientific and technological problems in micro-LED display remain to be resolved. As the chip size shrinks to below 50 μm, some problems that are not serious for large-sized LEDs appear for micro-LEDs. These problems include crystalline defects, wavelength uniformity, full-color emmision, massively tranferring and testing, etc. In the past two decades, various solutions to those problems have been proposed, which have greatly promoted the progress of micro-LED display. In this paper, an overview of micro-LED display since 2000 is given firstly, which includes the main research results and application achievements. Secondly the issues involved in the wafer epitaxy and chip process of micro-LEDs and possible solutions are discussed based on the display application in detail. The surface state induced by the dangling bonds and dry etching damages are concerned for the nonradiative recombination at a low injection level. The remedies are provided for those surface states, such as atomic-layer deposition and neutral beam etching. Some methods to reduce the threading dislocation and suppress the polarization field are summarized for micro-LED epitaxial growth. Moreover, the GaN-based LEDs on Si (100) substrate are also introduced for the future integration of micro-LEDs into the Si-based integrated circuits. As to the wavelength uniformity, the MOCVD equipment and growth technology including the laser treatment are discussed. In the chip processing part, the full-color display, mass transfer and effective inspection technology are discussed. Assembling RGB individual LEDs, quantum dot phosphor material and nanocoloumn LEDs are different routes for full-color display. Their trends in the future are provided. The pick and place, laser lift-off technologies, are strengthened in the massively transferring for micro-LEDs. In the massively and rapidly inspection technologies, the photoluminscence combined with Raman scattering, the electroluminescence combined with digital camera are discussed. Finally, the summary and outlook in these issues are also provided.

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Growth of GaN Layer on Patterned Al/Ti Metal Mask by Metal–Organic Chemical Vapor Deposition

Cited by 2 publications

References 16 publications

Comparison between Damage Characteristics of p- and n-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas

Comparison between Damage Characteristics of p- and n-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas

A review of key technologies for epitaxy and chip process of micro light-emitting diodes in display application

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