Growth of GaN Film on Graphene by HVPE

Abstract

A method to grow gallium nitride (GaN) films directly on the graphene layers by hydride vapor phase epitaxy (HVPE) method is reported in this work. We used a chemical vapor deposition (CVD) method to grow graphene on a copper foil, and the test results showed the presence of monolayer graphene at most regions. GaN films were grown on the graphene/MO-GaN substrate (GaN which was grown by metal organic vapor phase deposition) and MO-GaN template by HVPE method. Raman Spectroscopy, Scanning Electron Microscopy (SEM), and X-Ray Diffraction (XRD) were adopted for characterization. By comparing with the MO-GaN substrate, the crystalline quality of the GaN films were both increased. However, the crystalline quality of the HVPE-GaN with graphene interlayer is slightly lower than that directly grown on MO-GaN.

Growth of low-threading-dislocation-density GaN on graphene by hydride vapor phase epitaxy

“…We have reported the crystal quality of GaN films with graphene. 20) Here, we systemically studied the impact of a graphene layer on GaN films, and demonstrated an effective method for the self-assembly of the ELOG of GaN on 2D materials.…”