Growth of GaN-based nanorod heterostructures (core-shell) for optoelectronics and their nanocharacterization

Eymery, J.; Dang, Daniel Le Si

doi:10.1016/b978-1-78242-228-0.00012-0

Cited by 1 publication

(1 citation statement)

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“…To conclude, recent reviews of InGaN/GaN core−shell nanorods have highlighted the challenge and importance of controlling the long-range homogeneity along the length of the rod. 1,43 The results presented in this paper show that wide InGaN/GaN SQWs of uniform width and nearly uniform volume-averaged composition can be grown over the entire ∼1.2 μm length of m-planes created from etched GaN cores arranged in a hexagonal array of 2 μm pitch. However, nanoscale fluctuations of slightly raised InN mole fraction of up to 2−2.5 atom % occur in the InGaN layer, spaced at 20−30 nm intervals.…”

Section: ■ Summary and Conclusionmentioning

confidence: 79%

Structural and Optical Emission Uniformity of m-Plane InGaN Single Quantum Wells in Core–Shell Nanorods

Boulbar¹,

Edwards

Vajargah

et al. 2016

Crystal Growth & Design

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Controlling the long-range homogeneity of core−shell InGaN/GaN layers is essential for their use in light-emitting devices. This paper demonstrates variations in optical emission energy as low as ∼7 meV•μm −1 along the mplane facets from core−shell InGaN/GaN single quantum wells as measured through high-resolution cathodoluminescence hyperspectral imaging. The layers were grown by metal organic vapor phase epitaxy on etched GaN nanorod arrays with a pitch of 2 μm. High-resolution transmission electron microscopy and spatially resolved energy-dispersive X-ray spectroscopy measurements demonstrate a long-range InN-content and thickness homogeneity along the entire 1.2 μm length of the m-plane. Such homogeneous emission was found on the m-plane despite the observation of short-range compositional fluctuations in the InGaN single quantum well. The ability to achieve this uniform optical emission from InGaN/GaN core−shell layers is critical to enable them to compete with and replace conventional planar light-emitting devices.

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Section: ■ Summary and Conclusionmentioning

confidence: 79%