Growth of GaInAs/InP MQW using MOVPE on directly-bonded InP/Si substrate

Matsumoto, Keīichi; Makino, T.; Kimura, K.; Shimomura, Koichiro

doi:10.1016/j.jcrysgro.2012.09.063

Cited by 33 publications

(12 citation statements)

References 8 publications

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“…Since we can use a marker on the Si substrate, we can accurately control the positions of the Si-based waveguide and the III-V based device within the alignment tolerance of photolithography, which we cannot achieve if the BH laser is bonded to the Si after regrowth. Several research groups have already demonstrated the epitaxial growth of an InP-based layer using a directly bonded template on Si or SiO 2 [11][12][13][14]. However, lasing has yet to be reported because the characteristics of the InP-based layer grown on the templates were inferior to those of a layer grown on an InP substrate.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of InP to bury directly bonded thin active layer on SiO ₂ /Si substrate for fabricating distributed feedback lasers on silicon

Fujii

Sato²,

Takeda

et al. 2015

IET Optoelectronics

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The authors have developed a new heterogeneous-integration method for fabricating semiconductor lasers with high modulation efficiency on Si substrates. The method employs the direct bonding of an InP-based active layer to the SiO 2 layer of a thermally oxidised Si substrate (SiO 2 /Si substrate), followed by the epitaxial growth of InP to form a buried heterostructure (BH). By using the InP membrane, the authors realise epitaxial growth of an InP on the InP membrane directly bonded to Si without crystal quality degradation. Both a theoretical estimation and photoluminescence measurements revealed that the total laser thickness must be less than the critical thickness determined by the applied thermal strain. The authors confirmed that the crystal quality of the BH is comparable to that fabricated on an InP substrate when using a 250-nm-thick InP-based membrane. A distributed feedback laser fabricated on a SiO 2 /Si substrate exhibited continuous-wave operation up to 100°C and was directly modulated by a 40 Gbit/s non-return-tozero signal with a bias current of 15 mA. These results indicate that epitaxial growth using a directly bonded InP-based active layer on a SiO 2 /Si substrate allows us to achieve lasers with high modulation efficiency and to use a large-scale Si wafer as a fabrication platform, resulting in low-cost fabrication.

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Section: Introductionmentioning

confidence: 99%

Epitaxial growth of InP to bury directly bonded thin active layer on SiO ₂ /Si substrate for fabricating distributed feedback lasers on silicon

Fujii

Sato²,

Takeda

et al. 2015

IET Optoelectronics

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“…The PL intensity and peak wavelength with the InP/Si substrate was almost equivalent to that with the InP substrate, as shown in Figure . Combined with the XRD measurements, there appears to be no degradation of the crystalline quality, which is very important for the integration of optical devices …”

Section: Methodsmentioning

confidence: 96%

“…Although monolithic integration is the most desirable approach, the presence of antiphase domain (APD) structures and lattice mismatch that lead to threading dislocations make it difficult to obtain long lifetime of the optical light sources. On the other hand, hybrid integration is widely implemented by many researchers; however, we have proposed the monolithic integration of III–V LD epitaxial layers on wafer‐bonded InP/Si substrate via metal organic vapor phase epitaxy (MOVPE) . The uniqueness of this approach is the adhesion of InP thin film and Si substrate before MOVPE growth.…”

Section: Introductionmentioning

confidence: 99%

Lasing Characteristics of 1.2 µm GaInAsP LD on InP/Si Substrate

Periyanayagam

Nishiyama

Kamada

et al. 2018

Physica Status Solidi (a)

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Crystal growth on a Si substrate for the fabrication of a 1.2 mm GaInAsP laser diode is demonstrated via metal organic vapor phase epitaxy and lasing operation in the pulse regime at room temperature was successfully achieved. Direct wafer bonding at 400 C for the InP thin film and Si substrate is conducted prior to the growth process is adopted. After the bonding process, epitaxial layers are grown for the monolithic integration of InP optical devices on the wafer-bonded InP/Si substrate. The surface after crystal growth is quite smooth and contains less voids. The photoluminescence (PL) intensity of GaInAsP on the InP/Si substrate is almost equivalent to the PL intensity of InP substrate as a reference. After forming a metallic contact at the n-Si and p-InP sides, the chips are cleaved and the current density-light output (I-L) characteristics are measured. The I-L characteristics show that there is a difference in the threshold current density between the InP/Si substrate and InP substrate. The increase in the threshold current density is dependent on the measurement temperature, and that for the InP/Si substrate was as low as 4 kA cm À2 .

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“…Finally, an i-GaInAs layer with a thickness of 200 nm was grown to protect the surface of the InP template. [11][12][13] After thin InP templates were grown, they were used in the fabrication of the InP/Si and InP/SiO 2 /Si substrates. Herein, mainly the fabrication process for LDs on InP/SiO 2 /Si substrates is described.…”

Section: Methodsmentioning

confidence: 99%

Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO₂/Si Substrate

Han

Tsushima

Shirai

et al. 2021

Physica Status Solidi (a)

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The lasing characteristics of separate-confinement-heterostructure multi-quantum-well (SCH-MQW) laser diodes (LDs) grown on InP templates bonded to a SiO 2 /Si substrate using the hydrophilic bonding method are investigated. The layers of the SCH seven-quantum-well-structured LD are grown by low-pressure metal-organic vapor-phase epitaxy. After the pulsed power supply of a high-mesa waveguide is tested with a surface electrode structure, the LD grown on an InP/ SiO 2 /Si substrate is found to exhibit superior lasing characteristics compared to an LD grown on an InP/Si substrate, and the threshold current density is equivalent to that of a surface-electrode-structured LD grown on an InP substrate. The slope efficiency of the LD grown on the InP/SiO 2 /Si substrate is compared with that of an LD grown on an InP/Si substrate.

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Growth of GaInAs/InP MQW using MOVPE on directly-bonded InP/Si substrate

Cited by 33 publications

References 8 publications

Epitaxial growth of InP to bury directly bonded thin active layer on SiO ₂ /Si substrate for fabricating distributed feedback lasers on silicon

Epitaxial growth of InP to bury directly bonded thin active layer on SiO ₂ /Si substrate for fabricating distributed feedback lasers on silicon

Lasing Characteristics of 1.2 µm GaInAsP LD on InP/Si Substrate

Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO₂/Si Substrate

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Growth of GaInAs/InP MQW using MOVPE on directly-bonded InP/Si substrate

Cited by 33 publications

References 8 publications

Epitaxial growth of InP to bury directly bonded thin active layer on SiO 2 /Si substrate for fabricating distributed feedback lasers on silicon

Epitaxial growth of InP to bury directly bonded thin active layer on SiO 2 /Si substrate for fabricating distributed feedback lasers on silicon

Lasing Characteristics of 1.2 µm GaInAsP LD on InP/Si Substrate

Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO2/Si Substrate

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Epitaxial growth of InP to bury directly bonded thin active layer on SiO ₂ /Si substrate for fabricating distributed feedback lasers on silicon

Epitaxial growth of InP to bury directly bonded thin active layer on SiO ₂ /Si substrate for fabricating distributed feedback lasers on silicon

Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO₂/Si Substrate