Growth of GaAs from Ga solution under reduced gravity during the D2‐mission

Abstract

Tellurium‐doped GaAs was grown under reduced gravity during the Second German Spacelab‐Mission D2. The growth experiment MD‐ELI‐TRABE is described and first results are presented.

Long‐term Crystal Growth under Microgravity during the EURECA‐1 Mission (II) THM Growth of Sulphur‐doped InP

“…This findings are in good agreement with the earlier pg experiments concerning the THM growth of GaSb:Te during the SPACELAB-1 (NAGEL, BENZ), InP:S, and GaSb:Te during the D1 (DANILEWSKY et al 1989;DANILEWSKY et al 1990), and GaAs:Te during the D2 (DANILEWSKY et al 1994) and with Al,Gal_,Sb from the EURECA-1 mission actually discussed in part I (DANILEWSKY et al). As an important fact it has to be noted that only InP : S crystals grown during different space missions show morphological instabilities whereas all the other 111-V crystals including the ternary Al,Gal-,Sb system from EURECA-1 show a normal undisturbed growth behaviour.…”

“…As a result, the seed crystal is dissolved a longer time and growth st,arts later with slow growth rates. The same effect was observed for the GaAs experiment TRABE, performed during the D2 mission (DANILEWSKY et al 1994).…”

“…During the growth experiments the average pg level was nearly constant g which is much compared to the spacelab mission D2, where the average pg level was about g with several strong disturbances (DANILEWSKY et al 1994).…”

“…Two InP crystal growth experiments were performed under excellent microgravity (:oriditions on board of the unmanned European REt#rievaable CArrier EIJR.ECA rising the Automatic Mirror Facility AMF. The general description of the experiniental procedure iri space is given in part I (DANILEWSKY et al 1994) for the ternary compound Al,rGa,-JSb which is a well suited model system for ternary 111-V-compounds (DISCHOPINK, BENZ).…”

Structural features of Ge(Ga) single crystals grown by the floating zone method in microgravity

“…In real microgravity conditions it is possible to keep cylindrical zones of a melt approximately up to three diameters in length. By present time, microgravity experiments on growth by the FZ method (and also by its analogue, the floating-solution-zone method) of Ge [2][3][4][5], InSb [6], GaSb [2,7,8], GaAs [9], CdTe crystals and ternary solid solutions on its basis [10] are carried out. Unique purity of the Ge crystals is obtained [3].…”