Growth of GaAs by MOCVD using a solid arsenic source

̃a-Sierra, R. Pen; Castro-Zavala, J.G.; Escobosa, A.

doi:10.1016/0022-0248(91)90480-s

Cited by 13 publications

(11 citation statements)

References 9 publications

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“…The growth atmosphere was provided using a palladium-silver alloy hydrogen purifier. The main characteristics and details of the MOCVD reactor used for growing the samples have been published elsewhere 1,2 . After the substrate preparation, the first grown layer was a GaAs buffer layer, the thickness of this buffer layer was approximately 0.2 µm and in some cases 0.5 µm.…”

Section: Methodsmentioning

confidence: 99%

Growth and Characterization of AlxGa1-xAs Obtained by Metallic-Arsenic-Based-MOCVD

et al. 2017

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In this work reports results related to growth and characterization of Al x Ga 1-x As epilayers, which were grown in a metallic-arsenic-based-MOCVD system. The gallium and aluminium used precursors were trimethylgallium (TMGa) and trimethylaluminium (TMAl), respectively. By photoluminescence measurements observed, that only samples grown at temperatures above 800°C display photoluminescence. Hall measurements on the samples showed highly compensated material. Samples grown at temperatures lower than 750°C were highly resistive. Independently of the V/III ratio; the samples grown at higher temperatures were n-type. As the temperature is increased the layer compensation decreases. The Al x Ga 1-x As epilayers resulted n-type with an electron concentration of 1×10 17 cm -3 and a corresponding carrier mobility of ~2200 cm 2 /V×s. Raman spectra show vibrational bands associated to TO-GaAs-like (262 cm −1 ), LO-GaAs-like (275 cm -1 ), TO-AlAs-like (369 cm -1 ) and LO-AlAs-like (377 cm -1 ). The Raman spectra show the epilayers become more defective as the growth temperature is increased. The chemical composition was studied by SIMS exhibit the presence of silicon, carbon and oxygen as main residual impurities. The silicon concentration of ~1.0×10 17 cm -3 is very close to the carrier concentration determined by the van der Pauw measurements. The residual oxygen detected on the samples maybe responsible of the weak photoluminescence signal of the Al x Ga 1-x As layers.

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Section: Methodsmentioning

confidence: 99%

Growth and Characterization of AlxGa1-xAs Obtained by Metallic-Arsenic-Based-MOCVD

et al. 2017

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“…The GaAs epilayers were grown in an MOCVD system at atmospheric pressure; its main characteristics have been reported in the literature [1]. The growth temperature (T G ) is obtained by a system consisting of 4 halogen lights of 500 W and a type PID temperature controller.…”

Section: Methodsmentioning

confidence: 99%

Characterization of AlxGa1−xAs/GaAs heterostructures for single quantum wells grown by a solid arsenic MOCVD system

Castillo-Ojeda

Dı́az-Reyes²,

Galván-Arellano

et al. 2011

Journal of Luminescence

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“…The details of the MOCVD growth system were published elsewhere . Briefly, arsenic vapor from a solid arsenic source was transported until the growth zone, and trimethylgallium (TMG) was used as the gallium precursor.…”

Section: Methodsmentioning

confidence: 99%

Raman Studies of Carbon-Doped GaAs Layers Grown by a Metallic-Arsenic-Based Metalorganic Chemical Vapor Deposition System

Delgado-Macuil¹,

Rojas-López²,

Dı́az-Reyes³

et al. 2008

Crystal Growth & Design

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High-quality p type GaAs epilayers were grown by metalorganic chemical vapor deposition using trimethylgallium and metallic arsenic as gallium and arsenic sources, respectively. The range of hole concentration analyzed goes from 1017 to 1019 cm−3, as measured by the Hall−van der Pauw method. For controlling the hole concentration, a mixture of hydrogen and nitrogen was used as the carrier gas. Raman scattering spectra show transversal optical mode at 270 cm−1 for low-doped samples and a longitudinal optical (LO) mode at 292 cm−1 produced by phonon-hole-plasmon coupling for high-doped samples. The relative intensity of the LO mode for the doped samples correlates very well with the hole concentration. As the carrier concentration increases, the LO phonon-plasmon-coupled mode increases. The corresponding decrease of the intensity of the LO mode is interpreted as the decrease in the depletion layer as the carrier concentration increases.

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Growth of GaAs by MOCVD using a solid arsenic source

Cited by 13 publications

References 9 publications

Growth and Characterization of AlxGa1-xAs Obtained by Metallic-Arsenic-Based-MOCVD

Growth and Characterization of AlxGa1-xAs Obtained by Metallic-Arsenic-Based-MOCVD

Characterization of AlxGa1−xAs/GaAs heterostructures for single quantum wells grown by a solid arsenic MOCVD system

Raman Studies of Carbon-Doped GaAs Layers Grown by a Metallic-Arsenic-Based Metalorganic Chemical Vapor Deposition System

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