Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy

Xia, Yao; Brault, J.; Vennéguès, P.; Némoz, M.; Teisseire, M.; Leroux, M.; Chauveau, J.-M.

doi:10.1016/j.jcrysgro.2013.11.017

Cited by 10 publications

(6 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…After finishing the growth of AlN and decreasing the surface temperature under NH 3 flux, it was possible to observe a transition from 1 × 1 to 2 × 2 surface reconstruction when the temperature went below 600 °C. For NH 3 -assisted MBE, it is a characteristic feature of the metal polarity of the nitride layer [ 19 , 20 ]. Figure 2 c displays the diffraction patterns of the AlN surface after growth at low temperature (<550 °C) and the 2 × 2 reconstruction under NH 3 , which confirmed the Al polarity of the layer.…”

Section: Resultsmentioning

confidence: 99%

Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN

et al. 2022

View full text Add to dashboard Cite

In this study, AlN epilayers were grown by ammonia-assisted molecular beam epitaxy on 3 nm h-BN grown on c-sapphire substrates. Their structural properties were investigated by comparing as-grown and postgrowth annealed layers. The role of annealing on the crystalline quality and surface morphology was studied as a function of AlN thickness and the annealing duration and temperature. Optimum annealing conditions were identified. The results of X-ray diffraction showed that optimization of the annealing recipe led to a significant reduction in the symmetric (0 0 0 2) and skew symmetric (1 0 −1 1) reflections, which was associated with a reduction in edge and mixed threading dislocation densities (TDDs). Furthermore, the impact on the crystalline structure of AlN and its surface was studied, and the results showed a transition from a surface with high roughness to a smoother surface morphology with a significant reduction in roughness. In addition, the annealing duration was increased at 1650 °C to further understand the impact on both AlN and h-BN, and the results showed a diffusion interplay between AlN and h-BN. Finally, an AlN layer was regrown on the top of an annealed template, which led to large terraces with atomic steps and low roughness.

show abstract

Section: Resultsmentioning

confidence: 99%

Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN

et al. 2022

View full text Add to dashboard Cite

show abstract

“…As a main result, the layer polarity can be selected by simply adjusting the nucleation process, i.e. by tuning the growth temperature and V/III ratio [10]. Based on the growth conditions ensuring a Ga-polarity and in order to assess the potential of ZnO substrates for GaN optoelectronics, (Ga,In)N/GaN multi-QW-based LEDs were grown following a process similar to the one developed on sapphire substrates [11].…”

Section: Resultsmentioning

confidence: 99%

GaN-based heterostructures grown on ZnO substrates: from polarity control to the fabrication of blue LEDs

Brault¹,

Xia

Damilano³

et al. 2014

Asia Communications and Photonics Conference 2014

Self Cite

View full text Add to dashboard Cite

show abstract

“…However, because the sapphire substrate is expensive, and its size is only 2 inches, the price of GaN‐based LEDs has always been high. In view of this, many research teams (Gu et al, ; Hamdani et al, ; Kobayashi, Kawano, Kawaguchi, Ohta, & Fujioka, ; Ohgaki et al, ; Suzuki et al, ; Xia et al, ) began to evaluate the feasibility of replacing the sapphire growth‐substrate, for GaN‐based LEDs, with zinc oxide (ZnO). In addition to the low cost of ZnO, because GaN and ZnO have the same Wurtzite lattice structure, the lattice mismatch between ZnO and GaN is only 1.9%, thus the stress generated on the GaN film during the growth process can be reduced (Ko et al, ; Nahhas, Kima, & Blachere, ; Sun, Xiao, & Kwok, ).…”

Section: Introductionmentioning

confidence: 99%

Differences in the nanoscale electrical properties of GaN films grown on sapphire and ZnO substrates by molecular beam epitaxy

Chen

Chang

et al. 2017

Microscopy Res & Technique

View full text Add to dashboard Cite

Gallium nitride (GaN) films were grown on sapphire and zinc oxide (ZnO) single crystal substrates using plasma-assisted molecular beam epitaxy. As ZnO for GaN have a better lattice match, the coverage ratio of the GaN (002) plane on the ZnO substrate was significantly higher by about 45%. According to conducting atomic force microscopy and scanning surface potential microscopy measurements, the surface of GaN films grown on the ZnO substrate had two excellent physical characteristics: (a) an 18% reduction of the high contact current region, and (b) a highly uniform work function distribution. Therefore, for future applications in GaN-based light-emitting diodes, the use of ZnO as a substrate will prolong the luminescence lifetime and enhance the luminescent monochromaticity.

show abstract

Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy

Cited by 10 publications

References 29 publications

Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN

Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN

GaN-based heterostructures grown on ZnO substrates: from polarity control to the fabrication of blue LEDs

Differences in the nanoscale electrical properties of GaN films grown on sapphire and ZnO substrates by molecular beam epitaxy

Contact Info

Product

Resources

About