2011
DOI: 10.1109/tnano.2011.2104366
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Growth of Ga$_{\bm 2}$O $_{\bm 3}$ Nanowires and the Fabrication of Solar-Blind Photodetector

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Cited by 42 publications
(23 citation statements)
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“…Comparing the resulting R s obtained in this work with those reported in the literature for other oxides used in this application: (In x Ga 1-x ) 2 O 3 (R s = 6.9 X 10 −5 AW −1 ) and -Ga 2 O 3 (R s = 3.72 X 10 −4 AW −1 ), the potential use of DyCoO 3 as UV photodetector material can be noticed [34,35].…”
Section: Responsivity Ofsupporting
confidence: 64%
“…Comparing the resulting R s obtained in this work with those reported in the literature for other oxides used in this application: (In x Ga 1-x ) 2 O 3 (R s = 6.9 X 10 −5 AW −1 ) and -Ga 2 O 3 (R s = 3.72 X 10 −4 AW −1 ), the potential use of DyCoO 3 as UV photodetector material can be noticed [34,35].…”
Section: Responsivity Ofsupporting
confidence: 64%
“…Individual β -Ga 2 O 3 nanostructures such as nanobelts and nanowires, have been demonstrated by several reports to be potential solar-blind UV photodetectors [115120]. The first individual β -Ga 2 O 3 was reported in 2006 by Feng et al .…”
Section: Semiconductor Thin-film Uv Photodetectormentioning
confidence: 99%
“…Hence, the probability of blue-shift effect was positive during Ga 2 O 3 doping in the ZnO structures. The result also suggested that the fabricated GZO nanosheet UV PD was solar blind [20]. The responsivity of the fabricated PD was 2.83×10 −5 A/W at an incident light wavelength of 340 nm and an applied bias voltage of 1 V. The UV-to-visible rejection ratio, defined as the responsivity measured at 340 nm divided by the responsivity measured at 460 nm, was approximately 89 for the fabricated PD at 1 V bias voltage.…”
Section: Resultsmentioning
confidence: 72%