Growth of epitaxially twinned ferroelectric Bi3.25La0.75Ti3O12(028) thin film on GaN substrate

Epitaxial Ba0.5Sr0.5TiO3–GaN heterostructures with abrupt interfaces

“…This image confirms the grainy nature of the epitaxial BST film, where presumably the grains correspond to regions separated by in-plane rotational misorientation and 601 twinning. Such a microstructure is expected from the large FWHM value identified in the phi-circle and is consistent with other reports of oxide-GaN epitaxy [7,[9][10][11][12][13]. The lower panel in Fig.…”

“…Though reports exist for the epitaxial integration of oxides with GaN, there are no current examples of abrupt epitaxial interfaces between GaN and ferroelectric oxides that are free from interfacial phases at the atomic scale [4,5,[7][8][9][10][11][12][13]. In this report, we demonstrate that GaN-barium strontium titanate interfaces can be prepared using straightforward deposition methods at high temperatures in the absence of interfacial chemical reactions.…”

“…This is especially true considering the many literature examples of epitaxial oxides on semiconductors with thin amorphous or reactive interfaces that form during growth [26,27]. Though there are several papers illustrating epitaxy between complex oxides and GaN, to date, there are no highresolution microscopy reports showing chemically abrupt interfaces [7,[9][10][11][12][13]. To address this question, the BST-GaN interface was imaged in cross-section by STEM with atomic resolution.…”

Optical and Dielectric Properties of Transparent Epitaxial GdVO4/n-GaN/Sapphire Heterostructure

“…GaN has excellent intrinsic properties, such as chemical stability, high breakdown voltage, and good thermal conductivity, and can be used as the bottom electrode for many electronic devices. [6][7][8] Therefore, epitaxial n-GaN film grown on sapphire has been used as a transparent substrate and bottom electrode for the growth of GVO films.…”