Growth of epitaxial TmFeCuO4 thin films by pulsed laser deposition

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“…Various trivalent ions are selected as R ion in reported films: Lu, [18][19][20][21][22][23][24][25] Yb, [26][27][28] Tm 17 and In. 29 The change in R ions is unlikely to affect intrinsically as well as for bulk.…”

“…29 The change in R ions is unlikely to affect intrinsically as well as for bulk. These films are fabricated on various substrates: Al 2 O 3 (001), 18,21,25,26,28 YSZ(111), 17,19,24,27 ZnO(001), 29 MgO(111), 20,22,23 MgAl2O4(111) 23 and 6H-SiC(001). 23 Also various deposition techniques are tried: pulsed laser deposition (PLD), 17,18,20,21,24,27,29 electron beam deposition (EB), 19,25,26 molecular beam epitaxy (MBE), 22,23 and rf magnetron sputtering.…”

“…27 The as-depo films are annealed in some reports. 17,21,24 Although each group tried optimization of the deposition condition and discussed the composition, crystal structure and morphology, the conclusion differs depending on the groups. EB realizes higher crystalized film, despite of poor orientation.…”

“…27 The substitution of Cu for a half amount of Fe is also effective to control the ratio of divalent ions to trivalent ions because Cu 2+ and Fe 3+ are stable. 17 However, Fe-rich environment often generates Fe 3 O 4 in initial growth.…”

“…However, the film fabrication of this material is still a developing research due to the difficulty in selecting substrates and keeping the stoichiometory, which changes various properties significantly. 15, 16 13 reports have been published by 2017, [17][18][19][20][21][22][23][24][25][26][27][28][29] following the first report by M. Seki et al in 2010. 17 In this paper, the film growth and electric, magnetic and optical properties of the films are briefly reviewed.…”