Growth of CuInS2 films by rf ion plating and their characterization

Preparation and optical absorption of electrodeposited or sputtered, dense or porous nanocrystalline CuInS2 thin films

“…3), show a strong diffraction peak at 27.8 corresponding to a preferential (112) orientation of crystalline chalcopyrite CuInS 2 phase, in good agreement with the literature. This preferential orientation has been noticed in numerous CuInS 2 thin films prepared by different techniques [8,16]. This remarkable result was obtained without any substrate heating during deposition [7], post-annealing or chemical treatments with KCN [8].…”

Influence of post-heat treatment on the properties of CuInS2 thin films deposited by an ion layer gas reaction (ILGAR)

“…This material possesses several advantages over CuInSe 2 , namely a band gap energy (1.5 eV) that closely matches the visible part of the solar spectrum, a higher absorption coefficient (10 5 cm À1 ) and a lower toxicity. CuInS 2 thin films had been studied intensively by physical and chemical methods, such as co-evaporation [6], molecular beam deposition [7], ion plating [8], chemical vapour deposition [9], spray pyrolysis [10], chemical bath deposition [11], electro-deposition [12]. However, these methods are usually complex and expensive due to rigorous synthetic conditions such as the need for a high vacuum and temperature.…”

Optical absorbance enhancement by electrochemical surface roughening of CuInS2 thin films

“…2) shows crystalline chalcopyrite CuInS 2 phase with a preferential (112) orientation, corresponding to the 27.8 diffraction peak, in agreement with literature. 28,29 Grazing angle diffractograms of anodized samples show no differences compared to as-deposited films. Within detection limits of XRD and EDX, no change of surface composition is observed.…”