Growth of cubic SiC single crystals by the physical vapor transport technique

Semmelroth, Kurt; Krieger, Michael; Pensl, Gerhard; Nagasawa, Hiroyuki; Püsche, Roland; Hundhausen, Martin; Ley, L.; Nerding, M.; Strunk, H. P.

doi:10.1016/j.jcrysgro.2007.07.060

Cited by 14 publications

(7 citation statements)

References 20 publications

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“…30 During PVT growth, the use of an additional silicon source as well as SiC powder is necessary to stabilize the 3C-SiC polytype. 31 Surface studies revealed that annealing of a 4H-SiC surface under Si-rich conditions promoted a cubic-type surface reconstruction. 32 In the first case, SiC is clearly equilibrated in the two-phase SiC-Si domain, i.e.…”

Section: Resultsmentioning

confidence: 99%

A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth

et al. 2016

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International audienceThe links between the occurrence of a given silicon carbide (SiC) polytype and crystal growth conditions have been mainly empirically described. Although studies are a little more advanced, a similar description can be applied to point defects and especially dopants in the crystals. We propose a method to determine such links, based on a coupled thermodynamic and mass transport model, where SiC is treated as a solid solution. We implemented such an approach to the case of the seeded sublimation growth process, which is currently the industrial bulk growth process for SiC single crystalline ingots. The computation of both Si and C activities in the SiC crystal, between the SiC-C and SiC-Si two-phase equilibria, allowed first the assessment of the SiC crystal chemistry and second the linking of SiC-C and SiC-Si chemistry with the growth process parameters. We demonstrate that depending on the temperature, pressure and a temperature gradient, the activities of Si and C in the crystals can be described and tuned. The case of cubic polytype (3C-SiC) formation is specifically discussed. Its stabilization requires a high Si activity and a low C activity in the SiC crystal, meaning that the synthesis conditions must be close to the limit at the SiC + Si phase boundary

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Section: Resultsmentioning

confidence: 99%

A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth

et al. 2016

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“…Furthermore, we studied and compared the hardness and growth temperature of some well-known semiconductors with high hardness, as shown in Figure c. Among them, the hardness of diamond and c-BN reaches 93.4 and 65.5 GPa , with an extremely high growth temperature reaching 2000 and 1800 °C under high pressure. − For β-SiC, , B 4 C, SiO 2 , Al 2 O 3 , , and AlN , (32.8, 30, 33, 31, and 18 GPa, respectively), although their hardness is much lower than that of other superhard materials, the growth temperature they need is also as high as 1800 °C. Therefore, in comparison, the temperature required by isotope-enriched 10 BP crystals is relatively lower (1200 °C), and simultaneously, a threshold of 40 GPa usually owned by superhard materials is also achieved.…”

Section: Results and Discussionmentioning

confidence: 99%

Ultra-Hard (41 GPa) Isotopic Pure ¹⁰BP Semiconductor Microwires for Flexible Photodetection and Pressure Sensing

Lin

et al. 2022

ACS Nano

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An urgent demand for electronic and optoelectronic devices able to work in extreme environments promotes a series of research studies on semiconductor materials. Cubic boron phosphide (BP) as a semiconductor material with excellent characteristics shows great application potential. However, since the synthesis conditions required are difficult to achieve and the growth mechanism of BP is still unclear, there are few reports on the basic properties of BP and pure isotope BP, resulting in a narrow understanding of their special physical properties. Here, we successfully obtained highly pure isotopic 10 BP crystals by a vapor−liquid−solid (VLS) method unconventionally designed, which successfully overcomes the thermodynamic conflict between the high melting point of the boron element and low sublimation temperature of the phosphorus element. The 10 BP achieved owns an aspect ratio as high as 10 4 and a hardness up to 41 GPa. Besides, as an indirect bandgap semiconductor, it has ultrawide red emission spectra, a p-type conductivity with extremely low resistivity, and excellent photoelectronic and piezoelectric characteristics. Furthermore, compared with other superhard semiconductors like cubic BN and diamond, 10 BP has an obvious advantage of lower growth temperature (1200 °C). All these characteristics confirm the prospects owned by 10 BP in its applications to the field of high-conductivity, optoelectronic, strain-sensing, and superhard semiconductors.

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“…[4,[7][8][9][10][11][12] Moreover, the much lower concentration of interfacial traps between insulating oxide gate and 3C-SiC helps fabricate reliable and long-life devices. [8][9][10][11][13][14][15] The growth of 3C-SiC crystals, however, has remained a big challenge up to now despite of decades-long efforts by researchers because of its easy transformation into other polytypes during growth, [16][17][18][19][20] limiting the development of 3C-SiC-based devices.The physical-vapor-transport (PVT) method is the state-of-the-art technique for growing hexagonal 4H-and 6H-SiC crystals. This involves heating raw SiC powder above 2000 °C to produce gas species containing Si and carbon (C), which are then transported to a cold end where crystallization occurs on a seed crystal.…”

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High‐Quality and Wafer‐Scale Cubic Silicon Carbide Single Crystals

Wang,

Sheng,

Yang

et al. 2023

Energy & Environ Materials

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Cubic silicon carbide (3C‐SiC) has superior mobility and thermal conduction over that of widely applied hexagonal 4H‐SiC. Moreover, much lower concentration of interfacial traps between insulating oxide gate and 3C‐SiC helps fabricate reliable and long‐life devices like metal‐oxide‐semiconductor field effect transistors. However, the growth of high‐quality and wafer‐scale 3C‐SiC crystals has remained a big challenge up to now despite decades‐long efforts by researchers because of its easy transformation into other polytypes during growth, limiting the development of 3C‐SiC‐based devices. Herein, we report that 3C‐SiC can be made thermodynamically favored from nucleation to growth on a 4H‐SiC substrate by top‐seeded solution growth technique, beyond what is expected by classical nucleation theory. This enables the steady growth of high‐quality and large‐size 3C‐SiC crystals (2–4‐inch in diameter and 4.0–10.0 mm in thickness) sustainable. The as‐grown 3C‐SiC crystals are free of other polytypes and have high‐crystalline quality. Our findings broaden the mechanism of hetero‐seed crystal growth and provide a feasible route to mass production of 3C‐SiC crystals, offering new opportunities to develop power electronic devices potentially with better performances than those based on 4H‐SiC.

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Growth of cubic SiC single crystals by the physical vapor transport technique

Cited by 14 publications

References 20 publications

A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth

A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth

Ultra-Hard (41 GPa) Isotopic Pure ¹⁰BP Semiconductor Microwires for Flexible Photodetection and Pressure Sensing

High‐Quality and Wafer‐Scale Cubic Silicon Carbide Single Crystals

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Growth of cubic SiC single crystals by the physical vapor transport technique

Cited by 14 publications

References 20 publications

A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth

A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth

Ultra-Hard (41 GPa) Isotopic Pure 10BP Semiconductor Microwires for Flexible Photodetection and Pressure Sensing

High‐Quality and Wafer‐Scale Cubic Silicon Carbide Single Crystals

Contact Info

Product

Resources

About

Ultra-Hard (41 GPa) Isotopic Pure ¹⁰BP Semiconductor Microwires for Flexible Photodetection and Pressure Sensing