Growth of Cu2ZnSnS4 thin films by hybrid chemical approach

Jayasree, Y.; Kumar, Y.B. Kishore; Babu, G. Suresh; Bhaskar, P. Uday

doi:10.1016/j.physb.2021.413199

Cited by 13 publications

(5 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The lattice constants for these films were determined using a mathematical equation 9 , Here (hkl) represents the miller indices values, and d represents interatomic distance. The lattice parameters were found to be a = 0.5436 nm and c = 1.0856 nm, these are coincidences with the published data 25 and JCPDS card No.…”

Section: Structural Studiesmentioning

confidence: 99%

“…The conductivity of these films was measured to fall in the range of 1.39x10 -2 -1.52 x10 -2 (Ω cm) -1 . Employing the hot probe technique, the conductivity of the films was found to be p-type 6,9 .…”

Section: Optical Analysismentioning

confidence: 99%

“…Various physical, as well as chemical techniques, have been employed to grow Cu 2 ZnSnS 4 thin films. These techniques include pulsed laser deposition 7 , co-sputtering 8 , hybrid chemical approach 9 , chemical bath deposition 10 , two-stage process 11 , spin coating 12 , sol-gel methods 13 , and spray pyrolytic techniques 14,15 . The current study utilizes the spray pyrolytic method to deposit these thin films, which is an efficient, simple, and non-vacuum approach.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Cu2ZnSnS4 Thin Film Solar Cell Construction Using Chemical Technique

Y B,

Babu G,

A S

et al. 2023

Orient. J. Chem

View full text Add to dashboard Cite

Cu2ZnSnS4 (CZTS) presents itself as a potential quaternary semiconductor absorber layer in the field of thin film heterojunction solar cells. The conventional spray pyrolysis method has been used in the present investigation. X-ray diffraction results confirm the structure of the deposited films as kesterite. The lattice parameters are determined to be a = 0.5436 nm and c = 1.0856 nm. The material exhibits an energy gap of 1.5 eV and an optical absorption coefficient exceeding 104 /cm. CZTS films exhibit a p-type nature. The deposited films are kept on the hot surface for some time after the chemical spray pyrolysis is finished, which contributes to improved crystallinity. Using chemical synthesis techniques, a Cu2ZnSnS4 thin film solar cell is constructed. These solar cells exhibited an efficiency of 0.5%. Ongoing efforts are directed towards achieving reasonable efficiency levels.

show abstract

Section: Structural Studiesmentioning

confidence: 99%

Section: Optical Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Cu2ZnSnS4 Thin Film Solar Cell Construction Using Chemical Technique

Y B,

Babu G,

A S

et al. 2023

Orient. J. Chem

View full text Add to dashboard Cite

show abstract

“…In this context, Cu 2 ZnSnS 4 (CZTS), a quaternary compound semiconductor is proved as an alternative absorber layer to CIGS thin films. The elements present in these absorber layers are eco-friendly as well as non-toxic in nature (3,4) . CZTS thin films have splendid physical properties like direct bandgap (1.5 eV), higher absorption coefficient value (≥ 10 4 cm -1 ), tetragonal structure and p-type conductivity (4) .…”

Section: Introductionmentioning

confidence: 99%

Growth of Cu2ZnSnS4 Thin Film Solar Cells Using Chemical Synthesis

Nagamalleswari¹,

Kumar²

2022

IJST

View full text Add to dashboard Cite

Objectives: Cu 2 ZnSnS 4 thin film solar cell is fabricated by using the chemical spray pyrolysis method. Method: CZTS thin films were successfully deposited by employing the eco-friendly and cost-effective chemical spray pyrolysis method. X-ray diffraction (XRD) and Raman spectroscopy are used to investigate the structural properties of the prepared samples. The surface morphology of the deposited films is studied using a scanning electron microscope. An energy dispersive spectrometer is used to know the chemical compositions of the deposited films. A double beam spectrophotometer is used to study the optical characteristics of these films. The hot probe technique is used to confirm the nature of the conductivity of the deposited films. Findings: The XRD spectra of the thin films reveal the polycrystalline nature with the kesterite structure of the thin films. The optical band gap is found to be 1.52 eV and the absorption coefficient value of these films is found to be ≥ 10 4 cm -1 . The nature of conductivity is identified to be p-type. Finally, Cu 2 ZnSnS 4 thin film solar cell is fabricated with the substrate configuration glass/Mo/CZTS/CdS/Ag which exhibited an open circuit voltage and short circuit current of 156 mV and 1.82 mA/cm 2 respectively. Novelty: The growth of Cu 2 ZnSnS 4 thin films is studied by varying the distance between the spray nozzle and glass substrate from 25 to 35 cm in steps of 5 cm and maintaining all other parameters as constant. Finally, the Cu 2 ZnSnS 4 thin film solar cell is prepared in a substrate as well as a superstrate configuration.

show abstract

“…These characteristics make the CZTS compound a solid rival to CIGS and CdTe devices. 17,18 The Cu 2 ZnSnS 4 solar cell displays power efficiency magnitudes of 11.6%. 19 The efficiency of Cu 2 NiSnS 4 solar cells based on spray pyrolysis is up to 11.34% in 2019.…”

mentioning

confidence: 99%

Structural, Optical and Optoelectrical Properties of CuAlSnS₄ Thin Films

El Radaf,

Al-Zahrani

2024

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The present study used chemical deposition to deposit thin copper aluminum tin sulfide (CATS4) layers onto clean glass substrates. X-ray diffraction analysis was utilized to explore the crystalline structure of the CATS4 films, which refers to the CATS4 films having a cubic crystal structure. Energy-dispersive X-ray analysis showed the presence of Cu, Al, Sn, and S peaks in the CATS4 films, and their atomic ratio is close to 1:1:1:4. Spectrophotometric measurements of optical transmittance and reflectance spanning the 400–2500 nm spectral range were performed to describe the optical properties of the CATS4 layers. The CATS4 films demonstrated a direct energy gap transition between 1.42 and 1.31 eV. Further, increasing the layer thickness enhanced the refractive index and Urbach energy of the CATS4 films. The inspected CATS4 films showed better optoelectrical properties with increasing thickness, including improved optical conductivity, optical resistivity, optical carrier concentration, relaxation time, and optical mobility. Increasing the thickness of the CATS4 films increased their nonlinear optical indices. Additionally, the hot probe apparatus verified the p-type semiconducting characteristics of CATS4 films.

show abstract

Growth of Cu2ZnSnS4 thin films by hybrid chemical approach

Cited by 13 publications

References 25 publications

Cu2ZnSnS4 Thin Film Solar Cell Construction Using Chemical Technique

Cu2ZnSnS4 Thin Film Solar Cell Construction Using Chemical Technique

Growth of Cu2ZnSnS4 Thin Film Solar Cells Using Chemical Synthesis

Structural, Optical and Optoelectrical Properties of CuAlSnS₄ Thin Films

Contact Info

Product

Resources

About

Growth of Cu2ZnSnS4 thin films by hybrid chemical approach

Cited by 13 publications

References 25 publications

Cu2ZnSnS4 Thin Film Solar Cell Construction Using Chemical Technique

Cu2ZnSnS4 Thin Film Solar Cell Construction Using Chemical Technique

Growth of Cu2ZnSnS4 Thin Film Solar Cells Using Chemical Synthesis

Structural, Optical and Optoelectrical Properties of CuAlSnS4 Thin Films

Contact Info

Product

Resources

About

Structural, Optical and Optoelectrical Properties of CuAlSnS₄ Thin Films