Growth of Cu₂O Nanopyramids by Ion Beam Sputter Deposition

Abstract

In this study, we have successfully deposited n-type Cu2O triangular nanopyramids on Si by employing ion beam sputter deposition with an Ar : O2 ratio of 9 : 1 at a substrate temperature of 450°C. Scanning electron microscopy measurements showed attractively triangular nanopyramids of ∼500 nm edge and height lengths. Both X-ray diffraction and Raman spectroscopy characterizations showed the structures were single-phase polycrystalline Cu2O, and the room-temperature photoluminescence investigation showed interestingly green and blue exciton luminescence emissions. All Mott—Schottky, linear sweep voltammetry, and photocurrent measurements indicated that the conductivity of the Cu2O pyramids is of n-type.

Effects of substrate temperature on the growth of CuO nano/micro rods by ion beam sputter deposition

“…CuO thin films were deposited on SiO 2 /Si substrates at 300 °C, 350 °C, 400 °C and 450 °C ST by reactive IBSD [48,49] for 1.5 h applying a discharging voltage of 1 kV. All the samples were deposited with constant argon/ oxygen flow rate of (Ar:O 2 =1.8/0.6) standard cubic centimeters per minute (sccm).…”