Growth of CsI:Tl crystals in carbon coated silica crucibles by the gradient freeze technique

Singh, Swarnima; Desai, D. G.; Singh, Amit Kumar; Tyagi, Mohit; Sen, Shashwati; Sinha, Anil K.; Gadkari, S. C.; Gupta, S. K.

doi:10.1016/j.jcrysgro.2012.04.019

Cited by 17 publications

(16 citation statements)

References 13 publications

(12 reference statements)

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“…This assumption would be confirmed in the low temperature PL studies discussed in the following section. It is interesting to note that even for a 3 µm thick film (which may be considered as a bulk), the excitation spectrum is quite different from that of a 0.2 mol% Tl doped single crystal grown in our laboratory , as shown in the Fig. .…”

Section: Resultsmentioning

confidence: 89%

“…Figure a shows the normalized emission spectra for excitation at 5.6–5.5 eV for CsI:Tl films with thicknesses from 10 nm to 3 µm along with 0.2 mol% Tl doped CsI single crystal grown in our lab . The emission spectra of films showed a red‐shift (0.2 eV) with increasing film thickness.…”

Section: Resultsmentioning

confidence: 95%

“…Small pieces of single crystal of 0.2 mol% Tl doped CsI (99.999% purity) were heated in a molybdenum boat above 700 °C. The crystal chunks used for the evaporation were grown in carbon coated quartz crucibles using the gradient freeze technique . The base pressure of the chamber was kept at about 1 × 10 −5 mbar using a combination of diffusion and rotary pumps.…”

Section: Methodsmentioning

confidence: 99%

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Temperature dependent photoluminescence studies in CsI:Tl films with varying thicknesses

Shinde

Singh

Sen

et al. 2013

Phys. Status Solidi B

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Films of Tl doped CsI in the 10 nm to 3 µm thickness range were deposited on silicon substrates using the physical vapor deposition technique under vacuum conditions. The films exhibited a columnar growth behavior with a preferential orientation along 〈200〉. The photoluminescence (PL) properties of the deposited films were studied in the 77–300 K temperature range and found to be significantly different compared to the bulk CsI:Tl single crystal. In the excitation process, the unperturbed self trapped exciton (STE) excitation of the host was found to be dominant in films of lower thicknesses and direct excitation in “A” band of Tl+ and STE perturbed by the Tl+ gradually evolved with increasing film thickness. At low temperatures, the PL from a 1 µm thick CsI:Tl film revealed an unperturbed STE excitation at 5.9 eV with a corresponding emission around 3.7 eV that vanishes near room temperature. This suggests that the energy transfer from the host excitons to the activator site (Tl+) is weak at low temperatures in the CsI:Tl films.

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Section: Resultsmentioning

confidence: 89%

Section: Resultsmentioning

confidence: 95%

Section: Methodsmentioning

confidence: 99%

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Temperature dependent photoluminescence studies in CsI:Tl films with varying thicknesses

Shinde

Singh

Sen

et al. 2013

Phys. Status Solidi B

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“…The fwhm of the peak for (200) plane is comparable to those of some modified melting methods. 18,30 The polished CsI(Tl) crystals were mainly used for optical performance measurements with the measurement direction perpendicular to the growth plane (Figure 3). For 146.7 ppm Tl doped CsI crystal, the absorption edge at 320 nm is observed.…”

Section: Resultsmentioning

confidence: 99%

Approaching the Theoretical Light Yield Limit in CsI (Tl) Scintillator Single Crystals by a Low-Temperature Solution Method

Wang

Liu

et al. 2020

Crystal Growth & Design

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A nonvacuum solution-based growth process featuring an inverse temperature crystallization was demonstrated to grow high light yield halide scintillator single crystals. The asgrown Tl-doped cesium iodide, CsI(Tl), single crystals exhibit high transparency and characteristic Tl-doped photoluminescence and X-ray excited luminescence spectra with a decay time of about 535 ns at 550 nm emission peak. The CsI(Tl) scintillator with a low Tl doping concentration of 146.7 ppm grown by the solvent-based growth method exhibits a high light yield of 119 000 ± 6000 photons/MeV, which is about 1.3 times higher than those grown by the conventional melting method with a higher Tl concentration. This simple and convenient process may present a promising low-cost method for the mass production development of halide scintillator single crystals.

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“…Single crystals of CsI:Tl were used for the evaporation to have uniform activator concentration in the film. The crystals used for the evaporation were grown in carbon coated quartz crucibles using the gradient freeze technique [4]. The base pressure of the vacuum chamber was maintained at about 1-2 x10 -5 mbar.…”

Section: Methodsmentioning

confidence: 99%

Preparation and characterization of CsI:Tl thick films on silica glass substrate

Shinde¹,

Singh²,

Sen³

et al. 2014

AIP Conference Proceedings

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The films of Tl doped CsI (CsI:Tl) of varying thicknesses ranging from 10 µm -1.5 mm have been grown on silica glass substrates by thermal evaporation technique. Effects of substrate temperature, substrate surface texture and film thickness on the film structure and morphology were studied. The film shows a preferred orientation along the <200> direction having columns of diameter 1-6 µm depending on the film thickness. In the films of lower thicknesses a number of cracks were observed that vanishes with increase in the film thickness and shows a continuous and crack-free morphology beyond 500 µm thickness. Radio-luminescence of the films was also recorded using a white x-ray source (Cu target) and a solid state spectrometer in 300-800 nm wavelength range.

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Growth of CsI:Tl crystals in carbon coated silica crucibles by the gradient freeze technique

Cited by 17 publications

References 13 publications

Temperature dependent photoluminescence studies in CsI:Tl films with varying thicknesses

Temperature dependent photoluminescence studies in CsI:Tl films with varying thicknesses

Approaching the Theoretical Light Yield Limit in CsI (Tl) Scintillator Single Crystals by a Low-Temperature Solution Method

Preparation and characterization of CsI:Tl thick films on silica glass substrate

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