Growth of controlled profile crystals from the melt: Part II - Edge-defined, film-fed growth (EFG)

LaBelle, H.E.

doi:10.1016/0025-5408(71)90007-9

Cited by 154 publications

(35 citation statements)

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“…Depression which pumps the liquid from the crucible to the top of the die is due to the pulling upward of the crystal. This depression is equilibrated by surface tension and is given by the Laplace law [6,8,9].…”

Section: Pressure Equilibriummentioning

confidence: 99%

“…r c is directly dependent upon the shape of the desired crystal, r m depends only on the wetting angle ψ between the meniscus and the crystal, the surface tension of the material and the distance h between the melt and the top of the die [6][7][8][9]. Equation (7) introduces the capillary length of the liquid which compares the surface energy to the gravitational energy.…”

Section: Pressure Equilibriummentioning

confidence: 99%

“…Surprisingly, the impact of the fluid flow in the capillary channel and in the meniscus has not been intensively studied, in spite of the fact that Labelle, in his initial work [6], insisted on its importance (hence "Film-fed" in the process name). Labelle's ideas are extended in an analytical model aiming to describe the impact of the heat transfer close to the solidifying interface, the cooling of the growing crystal, then the pressure equilibrium in the meniscus.…”

Section: Introductionmentioning

confidence: 98%

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Working point of the EFG process

Carroz¹,

Duffar

2015

Crystal Research and Technology

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International audienceA theoretical investigation of the EFG process working point based on the meniscus height control is carried out. The link between the two control parameters, which are the pulling rate and the upper die temperature, is found from the thermal equilibrium at the crystallization interface. Using the pressure equilibrium in the film and considering the meniscus shape, the change in meniscus height depending on the crystal radius is analyzed. Limited to small crystal radii, an algebraic formulation of the temperature gradient at the interface is established. Some die design parameters are taken into account and their impacts on the process working point are discussed

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Section: Pressure Equilibriummentioning

confidence: 99%

Section: Pressure Equilibriummentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

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Working point of the EFG process

Carroz¹,

Duffar

2015

Crystal Research and Technology

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“…rk as shown in Figure 3. A significant advance in shaped crystal growth was made when LaBelle recognized [31] that when the die shaper was wetted by a melt it provided an effective means of isolating the growth interface from the bulk melt affording a better way of controlling the cross sectional shape of the Stepanov processes, a is the contact angle of the die material with the molten silicon [31].…”

Section: Efg Growthmentioning

confidence: 99%

Growth of Shaped Crystals

Feigelson

1989

Crystal Growth in Science and Technology

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Shaped crystal growth refers to the growth of single crystals with a predetermined cross sectional configuration designed for a specific application. The quest to develop such techniques has been driven by the need to minimize costs associated with device fabrication such as cutting or polishing, the loss of expensive materials during these fabrication processes, and the damage created by machining processes.Perhaps the first intentionally shaped crystals were the metal filaments grown by Von Gomperz [1] in Germany in 1922 through a hole in a mica plate positioned on the melt surface. In 1938, Stepanov [2] in the USSR, began studies on the growth of shaped crystals using mechanical means to control the forces of surface tension. In his approach, the melt column was crystallized outside of the container by inserting wettable or nonwettable dies of different shapes into the melt.In the United States, work on growing sapphire filaments and single crystal superalloy jet engine turbine blades began in the late 1960's [3,4]. The former led several years later to the development of the EdgeDefined Film Growth Process (EFG) [5] for the production of sapphire tubes, filaments, ribbons and other shapes for special purposes. The EFG process (which is similar to the Stepanov method) and the unidirectional casting method for single crystal turbine blades were the first shaped crystal growth methods to find practical commercial applications.Aside from these two applications, shaped crystal growth technology would probably have remained a laboratory curiosity were it not for the energy crisis in the mid-seventies and the emergence of an urgent need to produce high quality silicon for solar cell applications. The cost of producing silicon single crystals had to be reduced dramatically to make these devices competitive with other energy sources. Increased growth rates compared with conventional methods and reduction in machining costs and material losses were necessary. Development of production methods for the preparation of high quality single crystal silicon ribbon at very high growth velocities was therefore a highly desirable approach to minimize fabrication costs. As a result, existing methods such as the Stepanov, EFG, and Dendritic Web Processes were studied for this application, and 275 H. Arend et al. (eds.), Crystal Growth in Science and Technology

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“…Meniscus shaping was achieved through the use of induced RF fields, (199) twinned dendrites, (200,201) widely spaced pairs of dendrites (web Si), (202) dies, (203)(204)(205) and capillary-die combinations. (206)(207)(208)(209) These techniques all allow fast growth rates to be used since the dissipation of the latent heat of fusion is enhanced by the large surface area to volume ratio. However, there are major problems which have not been solved as yet with regard to surface nonplanarity, excessive dislocation generation, and solute segregation inhomogeneities.…”

Section: Shape Controlmentioning

confidence: 99%

Crystal Growth from the Melt

Carruthers

1975

Changes of State

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Growth of controlled profile crystals from the melt: Part II - Edge-defined, film-fed growth (EFG)

Cited by 154 publications

References 0 publications

Working point of the EFG process

Working point of the EFG process

Growth of Shaped Crystals

Crystal Growth from the Melt

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