Growth of compressively‐strained GaN films on Si(111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers

Pan, Lei; Xiang, Dong; Ni, Jian; Li, Zhonghui; Yang, Qiankun; Peng, Daqing; Li, Chuanhao

doi:10.1002/pssc.201510175

Cited by 6 publications

(6 citation statements)

References 18 publications

(23 reference statements)

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“…Consequently, although a thick crack-free GaN film could be obtained by inserting the multi-layered LT-AlN buffer, it was not suitable for the preparation of HEMTs with strict GaN crystal quality requirements. (2) AlGaN buffer layers include step-like graded AlGaN [97] and linearly graded AlGaN structures [98,99], where the Al composition gradually changes from an AlN nucleation layer to GaN [100], the gradual change of the lattice constant and thermal expansion coefficient from AlN to GaN being achieved by the graded AlGaN buffer layer [101]. On the one hand, the AlGaN buffer layers between the AlN and the GaN introduce compressive stress during the growth process to compensate for the tensile stress generated during cool down from the growth temperature, improving the crystal quality and surface roughness of the GaN film [102,103].…”

Section: Buffer Layermentioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

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Section: Buffer Layermentioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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“…In fact, there has always been much more interest in obtaining foreign semiconductor growth on Si substrates to realize optoelectronic integration . The successful and impressive story of III-nitrides heteroepitaxially grown on Si substrates is well known and has pushed forward the rapid progress of nitride-based light-emitting diodes and power electronics. − For the growth of β-Ga 2 O 3 (an oxide semiconductor) on Si substrates, however, two issues must be addressed: (1) the large lattice mismatch and (2) the negative effect of the native amorphous oxide layer on the Si surface, which is usually formed in the very initial stage of oxide thin-film growth, resulting in the degradation of structural quality.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga₂O₃ Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal–Organic Chemical Vapor Deposition

Gao,

Wang,

et al. 2023

ACS Appl. Mater. Interfaces

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We have achieved significantly improved device performance in solar-blind deep-ultraviolet photodetectors fabricated from β-Ga 2 O 3 thin films grown via metal− organic chemical vapor deposition (MOCVD) on p-Si(111) substrates by improving material quality through the use of an AlN buffer layer. High-structural-quality β-Ga 2 O 3 films with a (−201) preferred orientation are obtained after the introduction of the AlN buffer. Under 3 V bias, the dark current reaches a minimum of 45 fA, and the photo-to-dark current ratio (PDCR) reaches 8.5 × 10 5 in the photodetector with the metal− semiconductor−metal (MSM) structure. The peak responsivity and detectivity are 38.8 A/W and 2.27 × 10 15 cm•Hz 1/2 /W, respectively, which are 16.5 and 230 times that without the buffer layer. Additionally, benefiting from the introduction of the AlN layer, the photodetection performance of the β-Ga 2 O 3 /AlN/Si heterojunction is significantly improved. The PDCR, peak responsivity, and detectivity for the β-Ga 2 O 3 /AlN/p-Si photodetector at 5 V bias are 2.7 × 10 3 , 11.84 A/W, and 8.31 × 10 13 cm•Hz 1/2 /W, respectively. The improved structural quality of β-Ga 2 O 3 is mainly attributed to the decreased in-plane lattice mismatch of 2.3% for β-Ga 2 O 3 (−201)/AlN(002) compared to that of 20.83% for β-Ga 2 O 3 (−201)/Si(111), as well as the elimination of the native amorphous SiO x surface layer on the Si substrate during the initial growth of oxide thin films.

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“…Li et al [ 15 ] obtained high‐quality GaN‐based wafers by growing three AlGaN buffer layers on a 4 inch Si substrate using metal‐organic chemical vapor deposition (MOCVD) technology, the buffer layers had a content gradient of 0.65/0.45/0.10 and a thickness of 200 nm. Pan et al [ 16 ] discovered that optimizing the number of layers in the gradient AlGaN buffer layer and the difference in Al content in the AlGaN superlattice layer can adjust the strain state of the GaN layer more efficiently, thereby improving the surface morphology and crystal quality of GaN. Shen et al [ 17 ] achieved the growth of 2 μm‐thick, crack‐free GaN thin films by introducing ultra‐thin AlN/GaN superlattice interlayers into the superlattices, they controlled the average Al content by varying the thickness of the superlattice AlN and GaN, and found that cracks could be suppressed more effectively if the optimal average Al content is less than 0.5.…”

Section: Introductionmentioning

confidence: 99%

“…Li et al [15] obtained high-quality GaNbased wafers by growing three AlGaN buffer layers on a 4 inch Si substrate using metal-organic chemical vapor deposition (MOCVD) technology, the buffer layers had a content gradient of 0.65/0.45/0.10 and a thickness of 200 nm. Pan et al [16]…”

mentioning

confidence: 99%

Effect of High Al Content AlGaN Buffer Layer on the Properties of GaN‐on‐Silicon Materials

Liu,

Wang,

Nie

et al. 2023

Physica Status Solidi (a)

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The lattice parameter and thermal expansion coefficient mismatch between the silicon substrate and GaN lead to high tensile stress, which makes the GaN epitaxial layer prone to cracking. Effective compensation of tensile stress on GaN to prevent cracking is an important issue in GaN epitaxial growth. In this work, GaN‐on‐silicon materials with different AlGaN buffer layer structures are prepared by metal‐organic chemical vapor deposition (MOCVD). The GaN epitaxial material with smooth and crack‐free surface is fabricated by inserting 7 AlGaN buffer layers. The crystal quality of GaN is characterized using high resolution X‐ray diffraction (HRXRD). The full‐width half maximum (FWHM) value of GaN(002) and GaN(102) crystal plane is 398 arcsec and 780 arcsec, respectively. The surface root mean square (RMS) roughness of GaN material is 0.31 nm, and the vertical breakdown voltage (BV) of the epitaxial wafer reaches 918 V. The results show that high Al content of the AlGaN buffer layer can effectively reduce the tensile stress and dislocation density of the GaN layer when the entire AlGaN layer thickness remains constant. Suppressing the generation of surface cracks and improving the crystal quality can improve the vertical breakdown voltage and two‐dimensional electron gas (2‐DEG) characteristics of GaN epitaxial wafers.This article is protected by copyright. All rights reserved.

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Growth of compressively‐strained GaN films on Si(111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers

Cited by 6 publications

References 18 publications

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga₂O₃ Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal–Organic Chemical Vapor Deposition

Effect of High Al Content AlGaN Buffer Layer on the Properties of GaN‐on‐Silicon Materials

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Growth of compressively‐strained GaN films on Si(111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers

Cited by 6 publications

References 18 publications

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga2O3 Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal–Organic Chemical Vapor Deposition

Effect of High Al Content AlGaN Buffer Layer on the Properties of GaN‐on‐Silicon Materials

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High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga₂O₃ Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal–Organic Chemical Vapor Deposition