Growth of CdTe crustals by the vertical bridgman technique

Oda, Osamu; Hirata, K.; Matsumoto, Kazuhisa; Tsuboya, Ikumi

doi:10.1016/0022-0248(85)90079-x

Cited by 26 publications

(2 citation statements)

References 6 publications

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“…As a result a lamellar-like structure with longitudinally extended walls is formed. There are some authors ascribing dislocation cell patterns in semiconductor compounds exclusively to such morphological instable interface [22,23]. However, as we clarified by depth integrating laser scattering tomography (LST) in GaAs [24] the dislocation cells are of globular type that contradicts longitudinal formed ones to be expected at cellular-shaped crystallization front.…”

Section: Introductionmentioning

confidence: 95%

Dislocation cell structures in melt‐grown semiconductor compound crystals

Rudolph

2004

Cryst. Res. Technol.

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The phenomenon of dislocation patterning during melt growth of III-V, II-VI and IV-VI semiconductor crystals is discussed. The paper is focused on the formation of cellular structures driven by the growth inherent thermo-mechanical stress. Of particular interest is the scaling of relations between cells size, dislocation density and acting shear stress. Among the materials there are characteristic similarities but also significant variations of the cell genesis. After the related compound specifics are discussed possible measures for retardation of cell patterning during growth are demonstrated.

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Section: Introductionmentioning

confidence: 95%

Dislocation cell structures in melt‐grown semiconductor compound crystals

Rudolph

2004

Cryst. Res. Technol.

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“…The diodes were fabricated using p-CdTe single crystals obtained at the Physical Electronics Department, Chernovtsy University, Ukraine by a modified Bridgman technique [9]. The room-temperature resistivity of crystals was within 10 3 -10 4 cm and the Hall mobility and concentration of holes were found to be in the range 60-70 cm 2 V −1 s −1 and 10 13 -10 14 cm −3 respectively.…”

Section: Sample Preparationmentioning

confidence: 99%

Surface-barrier p-CdTe-based photodiodes

Kosyachenko

Sklyarchuk

et al. 1999

Semicond. Sci. Technol.

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Diodes fabricated by electron-beam evaporation of Al on p-CdTe substrates followed by removal of the metal layer have been investigated. It is shown that the diode electrical characteristics are determined by generation-recombination processes in the surface barrier, whereas the photoelectric properties are governed by the drift and diffusion current components, which are strongly influenced by surface recombination of carriers.The measured data are used to calculate the photoelectric quantum yield and the x-ray detection efficiency.

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Macro‐ and microsegregation of Zn in bridgman‐grown CdZnTe

Capper¹,

Harris²,

O’Keefe³

et al. 1995

Adv Material for Optics Elec

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One of the remaining problems in the use of CdZnTe material as substrates in liquid phase epitaxy (LPE) of Cd.Hg,-,Te (CMT) layers is that of variation in lattice matching, i.e. Zn content, across substrates. This will become increasingly important in the future as larger focal plane arrays of infrared detectors are required. The basic Bridgman growth process for CdTe/Cdo.,Zno,o,Te has been extended by applying the accelerated crucible rotation technique (ACRT). A marked reduction in axial Zn segregation is seen in 50 mm diameter ACRT material, but this effect is smaller in the case of 75 mm diameter crystals. Radial variations in Zn content are small in both sizes of crystal, demonstrating the benefits obtained from ACRT stirring. Both macro-and microsegregation effects have been studied in these crystals in an attempt to understand the growth mechanism. Zinc distributions have been assessed by near-infrared transmission, X-ray lattice parameter measurements, atomic absorption spectrometry (AAS) and Auger electron spectrometry (AES). The last technique was used for the microsegregation studies, while AAS provides the absolute calibration for Zn content. Comparisons with segregation behaviour found in the literature will be given. It will be shown that the low temperature gradient and low growth rate lead to a degree of supercooling in the first-to-freeze region and this leads to significant Zn segregation in both radial and axial directions. As the crystals reach full diameter, the radial variation is decreased, presumably by the action of the ACRT, and axial segregation is also reduced.

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Growth of CdTe crustals by the vertical bridgman technique

Cited by 26 publications

References 6 publications

Dislocation cell structures in melt‐grown semiconductor compound crystals

Dislocation cell structures in melt‐grown semiconductor compound crystals

Surface-barrier p-CdTe-based photodiodes

Macro‐ and microsegregation of Zn in bridgman‐grown CdZnTe

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