Growth of Cd(1−x)ZnxTe epitaxial layers by isothermal closed space sublimation

Tobenas, Susana; Larramendi, E. M.; Purón, E.; Melo, O. de; Cruz-Gandarilla, F.; Hesiquio-Garduño, Miguel; Tamura, M.

doi:10.1016/s0022-0248(01)01710-9

Cited by 25 publications

(15 citation statements)

References 13 publications

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“…In this case, ZnTe polycrystalline films were found to have strong preferential [1 1 1] orientation. By using a range of exposure and purge times wider than in previous papers [4,5], it was possible to verify the occurrence of multilayer adsorption in ZnTe grown by ICSS. This effect, previously observed by us in CdTe growth [6], avoids the self-termination of the reaction at the exposure steps.…”

Section: Discussionmentioning

confidence: 98%

“…General details of the growth process and the growth system can be found elsewhere [3][4][5]. A sketch of the growth system is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

“…The more complicated case of CdTe growth by ICSS has been also analysed [5,6] in more recent works. In this last case, the role of the purge time in obtaining a stabilized surface was demonstrated.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Structure and growth rate of ZnTe films grown by isothermal closed space sublimation

Melo

Larramendi

Duart

et al. 2007

Journal of Crystal Growth

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Section: Discussionmentioning

confidence: 98%

“…General details of the growth process and the growth system can be found elsewhere [3][4][5]. A sketch of the growth system is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Structure and growth rate of ZnTe films grown by isothermal closed space sublimation

Melo

Larramendi

Duart

et al. 2007

Journal of Crystal Growth

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“…[10][11][12] A GaAs substrate is exposed alternately to the elemental sources. The whole system is at the same temperature.…”

Section: Methodsmentioning

confidence: 99%

Adsorption, desorption, and interdiffusion in atomic layer epitaxy of CdTe and CdZnTe

Larramendi¹,

Melo²,

Vélez³

et al. 2004

Journal of Applied Physics

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The mechanisms controlling the growth rate and composition of epitaxial CdTe and Cd 1−x Zn x Te films were studied. The films were grown by isothermal closed space configuration technique. A GaAs(100) substrate was exposed sequentially to the elemental sources (Zn, Te, and Cd) in isothermal conditions. While growth of ZnTe followed an atomic layer epitaxy (ALE) regime [self-regulated at one monolayer (ML) per cycle]; the CdTe films revealed different growth rates in dependence of the growth parameters (exposure and purge times). Combination of short purge times and larger Cd exposure times led to not self-regulated growth regime for CdTe. This is ascribed to large Cd coverages that were dependent on Cd exposure times (following a Brunauer-Emmett and Teller-type adsorption). However, for longer purge times and/or short Cd exposure times, an ALE self-regulated regime was achieved with 2 ML/ cycle. In this sense, the self-regulation of the growth is limited by desorption, instead of absorption, as in the traditional growth technique. Cd atoms substitution by Zn atoms and subsequent evaporation of surface Cd atoms during Zn exposure has been proved. The influence of these facts on the growth and composition of the alloy is discussed.

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“…It has been used for growing very thin epitaxial films of some II-VI semiconductor compounds and alloys such as ZnTe [1], CdTe [2], Cd 1Àx Zn x Te [3] and CdSe [4]. In general, by controlling exposure and purge times, a self-regulated growth rate at one (ZnTe) or two (CdTe) monolayers (ML) per growth cycle can be obtained.…”

Section: Introductionmentioning

confidence: 99%