Growth of carbon-doped GaAs, AlGaAs and InGaAs by chemical beam epitaxy and the application of in-situ monitoring

Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C

“…To within experimental error ͑estimated to be Ϯ20% for ͓C͔͒, these results are consistent with approximate equality of p and ͓C͔, i.e., close to full activation of C As donors. This is what is expected, and it agrees with a substantial body of reported work 1,3,8,13,47 for GaAs:C. But if our ͑Hall-derived͒ p values were too low by a factor of 2 ͑as required by r Hall ϭ2.0), this would correspond to a hole concentration that is twice the carbon concentration, which is highly implausible. We therefore conclude that r Hall cannot be 2.0, but is instead much closer to 1.0.…”

“…12 C-doped GaAs has been shown to have advantages over Be-doped and Zn-doped GaAs for applications in devices requiring pϩϩ GaAs layers. These advantages include: higher hole mobilities, indicating less compensation; 3,4,6,7,10 preferential incorporation on As sites as substitutional acceptors, resulting in higher electrical activation; 1,3,8,13 and lower diffusivity. 2,9 A notable application of C-doped GaAs ͑GaAs:C͒ is its use in the base region of a heterojunction bipolar transistor, where it yields a high current gain.…”

“…Recently, a number of growth techniques, including metallo-organic chemical vapor deposition, [1][2][3] metallo-organic vapor phase epitaxy, [4][5][6][7] chemical beam epitaxy, 8 and molecular-beam epitaxy ͑MBE͒, 3,[9][10][11][12][13] have made it possible to achieve carbondoped thin-film fabrication with hole concentrations as high as 1.5ϫ10 21 cm Ϫ3 . 12 C-doped GaAs has been shown to have advantages over Be-doped and Zn-doped GaAs for applications in devices requiring pϩϩ GaAs layers.…”

Effects of carbon tetrabromide flux, substrate temperature and growth rate on carbon-doped GaAs grown by molecular beam epitaxy

“…Carbon is widely used as p-type dopant in GaAs because of its high solid solubility [1][2] and low diffusivity compared to other p-type dopants [3]. These characteristics highlight the potential of carbon as an ideal p-type dopant in devices that require high-speed performance and reliability.…”

Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors

“…Carbon has been widely used as a p-type dopant in GaAs because of its extremely high solid solubility [1,2] and much lower diffusivity compared to other p-type dopants [3]. These characteristics indicate the potential of carbon as an ideal p-type dopant for use in the device applications that require high-speed performance and reliability.…”