Growth of Bimodal Sn-Catalyzed CdS Nanowires by Using Tin Sulfide

Song, Man Suk; Kim, Yong

doi:10.1021/jp500696r

Cited by 17 publications

(25 citation statements)

References 39 publications

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“…S3 for details, Supporting Information). Regular‐shaped ribbons were first formed through the vapor–liquid–solid (VLS) mechanism under the catalysis of Sn . Then, the as‐grown ribbons will act as the backbone for the following growth of the triangular ridges on their top and bottom surfaces through the vapor–solid (VS) process .…”

Section: Resultsmentioning

confidence: 99%

Nanolaser arrays based on individual waved CdS nanoribbons

Zhang

Zhu

et al. 2016

Laser & Photonics Reviews

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Nanoscale lasers are attractive for their potential applications in highly integrated photonic devices and systems. Here, nanolaser arrays are realized based on individual waved CdS nanoribbons (NRs) with periodically modulating thickness along the length direction. Microstructure investigations reveal that such a waved NR is formed with triangular‐prism‐like ridges alternately assembled on both sides of a surface flat nanoribbon. Under the focused laser (488 nm) excitation, the emitted light is guided along the length of the waved ribbons and can be well confined into theses ridges, being reflected and leaked out at their ends along both the lateral sides of the NRs. Polarization measurements further demonstrate the formation of the cavities along the length of the ridges. Under pulse laser excitation, the confined light in all these parallel ridges can resonate and realize lasing, forming a nanolaser array based on these individual waved NRs. These nanolasers arrays have potential applications in highly integrated photonics, signal processing, and high‐throughput sensing.

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Section: Resultsmentioning

confidence: 99%

Nanolaser arrays based on individual waved CdS nanoribbons

Zhang

Zhu

et al. 2016

Laser & Photonics Reviews

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“…The CVD method is known to be effective in the large-scale fabrication of CdS nanostructures. However, due to the high sublimation temperature of CdS powder, the growth temperature of CdS nanostructures is as high as 800 °C1219, and the growth process requires the use of an Au catalyst20. Unfortunately, Au functions as an impurity, trapping electrons and holes in the nanostructure, and affecting the performance of the device.…”

mentioning

confidence: 99%

Catalyst- and template-free low-temperature in situ growth of n-type CdS nanowire on p-type CdTe film and p-n heterojunction properties

Cai

et al. 2016

Sci Rep

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CdS is an important semiconductor used in optoelectronic devices. Simple techniques for growing CdS nanostructures are thus essential at a low cost. This study presents a novel method for growing singlecrystal n-type CdS nanowires on p-type CdTe films by thermal annealing in an H 2 S/N 2 mixed gas flow, which does not require the help of a catalyst or template. The formation process and growth mechanism of the nanowires are investigated. Well-dispersed whiskerlike CdS nanostructures are obtained at an appropriate annealing temperature and duration. We suggest that the stress-driving mechanism of nanowire formation may contribute to the growth of CdS nanowires, and that the evaporation of Te through the boundaries of the CdS grain seeds plays an important role in the sustainable growth of nanowire. In addition, CdS/CdTe heterojunction device is fabricated on Mo glass. The I-V characteristic of the heterojunction in dark shows typical rectifying diode behavior. The turn-on voltage can be regulated by annealing conditions. Meanwhile, the obvious photovoltaic effect is obtained on the in situ growth heterojunction prepared at low annealing temperature. Hence, this is a new fabricated method for CdTe-based materials in the field of energy conversion.CdS is a well-studied semiconductor with versatile properties, such as a direct band gap of 2.4 eV at room temperature, a high refractive index, excellent transport properties and good chemical and thermal stability. It has been used extensively in photovoltaic devices, light-emitting diodes in flat panel displays, transistors, and logic gates 1-3 . Low-dimensional CdS nanostructures, such as nanorods, nanowires, and nanotubes, have attracted increasing attention because of their superior optical, physical, electronic and catalytic properties compared with traditional thin film and bulk materials [4][5][6] . A wide range of applications for nanodevices and nanosystems based on these CdS nanostructures has recently been explored, including a thin film transistor fabricated on CdS nanoribbons 4 , and chemical vapor deposition (CVD) [15][16][17] . Although each of these methods has its own advantages, most involve a solution process or organic solvents 13,18 , and the reaction process is uncontrollable. The CVD method is known to be effective in the large-scale fabrication of CdS nanostructures. However, due to the high sublimation temperature of CdS powder, the growth temperature of CdS nanostructures is as high as 800 °C 12,19 , and the growth process requires the use of an Au catalyst 20 . Unfortunately, Au functions as an impurity, trapping electrons and holes in the nanostructure, and affecting the performance of the device. Templates, such as anodic aluminum oxide 9,21 , which are used to prepare nanowires, can also yield better CdS arrays. However, this method also needs Au catalyst to grow nanostructure 9 . So, an effective method

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“…Compared with other Sn-catalyzed nanowires reported so far, ,,, the Sn catalyst on top of a ZnTe nanowire has an outstandingly asymmetric spherical shape as shown in Figure a. The intruding part of the catalysts as indicated by red arrows in Figure a,b was observed in SEM and TEM images, respectively.…”

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confidence: 82%

Wurtzite ZnTe Nanotrees and Nanowires on Fluorine-Doped Tin Oxide Glass Substrates

2017

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ZnTe nanotrees and nanowires were grown on fluorine-doped tin oxide glass by physical vapor transport. Sn from a fluorine-doped tin oxide layer catalyzed the growth at a growth temperature of 320 °C. Both the stem and branch nanowires grew along ⟨0001⟩ in the rarely observed wurtzite structure. SnTe nanostructures were formed in the liquid catalyst and simultaneously ZnTe nanowire grew under Te-limited conditions, which made the formation of the wurtzite structure energetically favorable. Through polarization-dependent and power-dependent microphotoluminescence measurements from individual wurtzite nanowires at room temperature, we could determine the so far unknown fundamental bandgap of wurtzite ZnTe, which was 2.297 eV and thus 37 meV higher than that of zinc-blend ZnTe. From the analysis of doublet photoluminescence spectra, the valence band splitting energy between heavy hole and light hole bands is estimated to be 69 meV.

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Growth of Bimodal Sn-Catalyzed CdS Nanowires by Using Tin Sulfide

Cited by 17 publications

References 39 publications

Nanolaser arrays based on individual waved CdS nanoribbons

Nanolaser arrays based on individual waved CdS nanoribbons

Catalyst- and template-free low-temperature in situ growth of n-type CdS nanowire on p-type CdTe film and p-n heterojunction properties

Wurtzite ZnTe Nanotrees and Nanowires on Fluorine-Doped Tin Oxide Glass Substrates

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