Growth of beryllium doped Al<i>x</i>Ga1−<i>x</i>As/GaAs mirrors for vertical-cavity surface-emitting lasers

Peters, M.G.; Thibeault, B.J.; Young, D.B.; Gossard, A. C.; Coldren, L. A.

doi:10.1116/1.587563

Cited by 30 publications

(8 citation statements)

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“…DBR interfaces are parabolically graded to reduce interface electrical resistance. 2 The InGaAsP multi-quantum well ͑MQW͒ active region consists of seven quantum wells ͑QWs͒ at about 1% compressive strain and six straincompensating barriers at about Ϫ0.9% tensile strain. The MQW is sandwiched between InP spacer layers that have been extended by thin GaAs layers on top of each fused mirror to increase the emission wavelength.…”

Section: ͓S0003-6951͑96͒03019-7͔mentioning

confidence: 99%

Numerical analysis of 1.54 μm double-fused vertical-cavity lasers operating continuous-wave up to 33 °C

Piprek

Babic

Bowers

1996

Applied Physics Letters

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Section: ͓S0003-6951͑96͒03019-7͔mentioning

confidence: 99%

Numerical analysis of 1.54 μm double-fused vertical-cavity lasers operating continuous-wave up to 33 °C

Piprek

Babic

Bowers

1996

Applied Physics Letters

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“…The layer interfaces are parabolically graded to reduce interface electrical resistance. 10 The InGaAsP multi quantum well ͑MQW͒ active region consists of 7 QWs with about 1.0% compressive strain and 6 barriers with about 0.9% tensile strain. It is embedded in InP spacer layers that have been extended by thin GaAs layers on top of each fused mirror to increase the emission wavelength.…”

Section: Introductionmentioning

confidence: 99%

Simulation and analysis of 1.55 μm double-fused vertical-cavity lasers

Piprek

Babic

Bowers

1997

Journal of Applied Physics

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Using a comprehensive numerical model, we analyze the first long-wavelength (1.55 μm) vertical-cavity surface-emitting lasers operating continuous-wave at room temperature (up to 33 °C). These double-fused lasers employ strain-compensated InGaAsP multi-quantum wells sandwiched between GaAs/AlGaAs distributed Bragg reflectors that are fused on both sides of the InP spacer. The two-dimensional model includes drift and diffusion of electrons and holes, finite-element thermal analysis, calculation of the internal optical field at threshold, and k⋅p band structure computations. The simulation shows excellent agreement with a large variety of experimental characteristics. Internal laser parameters like optical losses and injection efficiency are obtained. The thermal conductivity of the multilayer mirror is found to be only one third of the value expected. Temperature dependent absorption and Auger recombination within the active region as well as lateral leakage currents are identified as dominating loss mechanisms. The analysis shows great potential for high-temperature operation of double-fused vertical-cavity lasers.

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“…Our measurements imply that CBE may be a better growth procedure for this purpose than MOVPE; this is because the layers are produced by using a controlled growth interrupt instead of by doping a layer during growth. It has been shown that 8-doping at the interfaces of heterostructures used as distributed Bragg reflector (DBR) stacks leads to a low series resistance [29]. For these structures the p-type 8-layers have to be in the material with the higher bandgap, that is AlAs (or AlxGal -xAs) when it is combined with GaAs as the second component.…”

Section: Discussionmentioning

confidence: 99%

Carbon ?-doping GaAs superlattices

Davidson

Hart

Newman

et al. 1996

J Mater Sci: Mater Electron

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Carbon 6-doping GaAs superlattices incorporating 50 layers have been grown either by chemical beam epitaxy (CBE) using CBr4 as the source of the carbon or by metallorganic vapour phase epitaxy (MOVPE) using CCI4. Infrared (IR) localized vibrational mode (LVM) spectroscopy showed that carbon atoms were incorporated on the As sublattice and that hydrogen was incorporated as H-CAs pairs during growth by MOVPE. The hydrogen was removed by an anneal at 600°C for 15 min in N2, leading to an increase in the carrier concentration. High resolution X-ray diffractometry (HRXD) was used to measure the strain in the layers. Simulation of the 4 0 0 diffraction profiles using dynamical theory was used to determine the thickness ( ~ 1 nm) and peak concentrations (in excess of 2 × 102o cm-3) of the 5-doped layers. Device applications and 5-layers in AlAs are briefly considered.

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Growth of beryllium doped AlxGa1−xAs/GaAs mirrors for vertical-cavity surface-emitting lasers

Abstract: Articles you may be interested inDifferential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surfaceemitting laser structure

Cited by 30 publications

References 0 publications

Numerical analysis of 1.54 μm double-fused vertical-cavity lasers operating continuous-wave up to 33 °C

Numerical analysis of 1.54 μm double-fused vertical-cavity lasers operating continuous-wave up to 33 °C

Simulation and analysis of 1.55 μm double-fused vertical-cavity lasers

Carbon ?-doping GaAs superlattices

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