Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBE

Growth mechanism of c-axis-oriented AlN on (1 1 1) diamond substrates by metal-organic vapor phase epitaxy

“…The growth dynamics of the AlN layer grown on (0 0 1) diamond was similar to that of the AlN layer grown on (0 0 1) Si. Although the microstructures of AlN and GaN on (111) Si substrate have been extensively studied [15][16][17], that of AlN on (111) diamond is still unclear. In addition, the process and mechanism of AlN growth on the (111) diamond layer by MOVPE have not yet been discussed.…”

Structural analysis of metalorganic chemical vapor deposited AIN nucleation layers on Si (111)

“…Even though there still exists 23.4% lattice misfit between AlN and Si, wurtzite AlN with good structural properties and smooth surface morphology can be grown on Si (1 1 1) [11][12][13]. This is due to the lattice matching between Si (1 1 1) and wurtzite AlN along certain crystallographic orientation and through strain relaxation via large number of misfit dislocations at the Si/AlN interface [14].…”

Nitridation of Si(1 1 1) for growth of 2H-AlN(0 0 0 1)/β-Si3N4 /Si(1 1 1) structure

“…AlN grown on a Si substrate is very important because of low cost, large area and high thermal conductivity of Si. Therefore, a lot of researches about AlN grown on a Si substrate have been conducted [2][3][4][5]. However, AlN on a Si substrate is low crystal quality compared with AlN on SiC and sapphire substrates because of large lattice mismatch between AlN and the Si substrate.…”

“…Nitridation was performed by various methods, such as using NH 3 [9,10], NO [11] and N atoms [12]. When N atoms reacted with Si surface, the honeycomb like (''8 Â 8'') structure was observed by STM [12].…”