Growth of Arsenic-Doped Hg1– xCdxTe (x ~ 0.4) Epilayers by Metalorganic Chemical Vapor Deposition

Evstigneev, V. S.; Chilyasov, A. V.; Моисеев, А. Н.; Kostyunin, M. V.

doi:10.1134/s0020168519100029

Cited by 2 publications

(1 citation statement)

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“…It is evident that the QE does not change significantly for the doping density in range of ~ 10 16 cm −3 which is a routinely achievable value in the vacancy doped p-type layer. 44,45 Figure 10b shows the QE versus doping density for n-type absorber layer. It can be observed that for a 3-μm thickness, a minimum SRH lifetime of > 1 μs is required to achieve a high QE.…”

Section: Theoretical Modelling Of Qe and Device Designmentioning

confidence: 99%

Design Principles for High QE HgCdTe Infrared Photodetectors for eSWIR Applications

Akhavan

Umana‐Membreno

et al. 2022

J. Electron. Mater.

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In this paper, we study the limiting mechanisms and design criteria of HgCdTe photodetectors for extended shortwave infrared applications with ultra-high quantum efficiency (QE) in both n-on-p and p-on-n technologies. Numerical and analytical models are employed in order to study the possibility of achieving ultra-high QE eSWIR detectors for the operational wavelengths of approximately 2.0 μm, and our study shows that by proper design of absorber layer and doping density, such a detector can be engineered. Furthermore, we demonstrate that the Shockley–Read–Hall (SRH) lifetime, absorber layer doping density and absorber layer thickness all have an impact on the quantum efficiency whether the detector is used as a small-area pixel element in a focal plane array or as a discrete large-area detector for sensing applications.

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Section: Theoretical Modelling Of Qe and Device Designmentioning

confidence: 99%