Growth of Amorphous Passivation Layer Using Phenethylammonium Iodide for High‐Performance Inverted Perovskite Solar Cells

Zhang, Fan; Huang, Qinxun; Song, Jun; Zhang, Yaohong; Ding, Chao; Liu, Feng; Liu, Dong; Li, Xiaobin; Yasuda, Hironobu; Yoshida, Kōji; Qu, Junle; Hayase, Shuzi; Toyoda, Taro; Minemoto, Takashi

doi:10.1002/solr.201900243

Cited by 44 publications

(61 citation statements)

References 36 publications

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“…This implies that the islands have identical electrical and chemical properties. The PEAI signature (5.4°) [ 21 ] is yet absent in the associated XRD pattern (Figure 1e). When the PEAI amount was increased to 5 mg, a PEAI peak (5.4°) appears in XRD pattern and the perovskite surface coverage started to show inhomogeneities, forming regions of interconnected grains (Figure 1c).…”

Section: Resultsmentioning

confidence: 99%

Enhanced Hole‐Carrier Selectivity in Wide Bandgap Halide Perovskite Photovoltaic Devices for Indoor Internet of Things Applications

Lee

Choi

Soufiani

et al. 2021

Adv Funct Materials

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Halide perovskite‐based photovoltaic (PV) devices have recently emerged for low energy consumption electronic devices such as Internet of Things (IoT). In this work, an effective strategy to form a hole‐selective layer using phenethylammonium iodide (PEAI) salt is presented that demonstrates unprecedently high open‐circuit voltage of 0.9 V with 18 µW cm−2 under 200 lux (cool white light‐emitting diodes). An appropriate post‐deposited amount of PEAI (2 mg) strongly interacts with the perovskite surface forming a conformal coating of PEAI on the perovskite film surface, which improves the crystallinity and absorption of the film. Here, Kelvin probe force microscopy results indicate the diminished potential difference across the grain boundaries and grain interiors after the PEAI deposition, constructing an electrically and chemically homogeneous surface. Also, the surface becomes more p‐type with a downshift of a valence band maximum, confirmed by ultraviolet photoelectron spectroscopy measurement, facilitating the transport of holes to the hole transport layer (HTL). The hole‐selective layer‐deposited devices exhibit reduced hysteresis in light current density–voltage curves and maintain steadily high fill factor across the different light intensities (200–1000 lux). This work highlights the importance of the HTL/perovskite interface that prepares the indoor halide perovskite PV devices for powering IoT device.

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Section: Resultsmentioning

confidence: 99%

Enhanced Hole‐Carrier Selectivity in Wide Bandgap Halide Perovskite Photovoltaic Devices for Indoor Internet of Things Applications

Lee

Choi

Soufiani

et al. 2021

Adv Funct Materials

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“…Generally, the increase in the grain size of perovskite films can reduce the defect density, and hence suppress the nonradiative recombination in the PSCs. [22,32] Considering that the average grain sizes of two kinds of perovskite films were larger than their respective film thickness, and all the films showed film-through large gain distributions from the cross-sectional SEM images (see Figure S6, Supporting Information), the small decrease in perovskite grain size did not affect the self-passivation PSC to achieve its high performance. In addition, the root-mean-square (RMS) value of roughness obtained from self-passivation perovskite film was reduced from 11.99 nm (control) to 7.35 nm, and the depth of grain boundaries was also obviously decreased ( Figure S7, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

A New Strategy for Increasing the Efficiency of Inverted Perovskite Solar Cells to More than 21%: High‐Humidity Induced Self‐Passivation of Perovskite Films

et al. 2020

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The performance of perovskite solar cells (PSCs) is known to be extremely sensitive to humidity in the preparation environment. However, the main mechanism by which the moisture influences the quality of the perovskite film and the device performance is not yet fully understood. Herein, a new strategy is established to obtain inverted PSCs with a remarkabll high VOC by including a high‐humidity treatment and sufficient DMSO‐atmosphere annealing in the preparation process. It is found that the lattice distortion on the surface of perovskite grains caused by the high‐humidity treatment plays a key role in the self‐passivation of perovskite. Inverted (p‐i‐n) PSCs based on the self‐passivated perovskite films show effective suppression of nonradiative recombination, which increase the device VOC to 1.17 V and achieve the highest efficiency of 21.38%. It is expected that the findings of this work shed more light on the currently proposed mechanism governing the action of moisture on the performance of the PSCs.

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“…This phenomenon is attributed to the electron‐richer environment of FA + , which is probably due to the electron‐donor effect of phenyl‐containing PMAI on the host perovskites. [ 39 ] The electron‐rich phenyl moiety is likely to provide π electrons to the relatively electrophilic methylammonium moiety, [ 40 ] and meanwhile, phenyl rings are known to play electron‐donating roles to the iodide compounds (e.g., I 2 , CH 3 I, and etc.) in perovskite films, [ 41 ] which could derive from the formed a halogen bond (XB) between the iodide compounds (XB donor) and PMAI (XB acceptor).…”

Section: Figurementioning

confidence: 99%

Superior Carrier Lifetimes Exceeding 6 µs in Polycrystalline Halide Perovskites

et al. 2020

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such as charge-carrier lifetimes and diffusion lengths in perovskite films should be maximized, which are sensitive to the density of sub-bandgap trap states acting as nonradiative recombination centers. [12,13] Long carrier lifetimes and diffusion lengths imply a reduction in trap densities constituted by multidimensional defects that can be broadly observed at the grain boundaries and surfaces of polycrystalline perovskite films. Therefore, defect modulation to efficiently suppress the undesired nonradiative recombination pathways in perovskite films have resulted in dramatically enhanced carrier lifetimes and diffusion lengths, which can be translated into higher open-circuit voltage (V OC) of photovoltaic devices. [14-18] Recently, surface post-treatments, such as depositing a layer of ammonium salts onto the perovskites, are the most frequently employed strategies, passivating the defects in the topmost area of the perovskite films. [19-22] However, the additional depositing procedure is considered to bring much uncertainty to the original perovskite films. [23,24] Recently, Yoo et al. demonstrated that the commonly used solvents (e.g., isopropanol) for dissolving ammonium salts, due to their strong polarity, had negative effects on the underlying perovskite films. [25] Lead halide perovskite films have witnessed rapid progress in optoelectronic devices, whereas polycrystalline heterogeneities and serious native defects in films are still responsible for undesired recombination pathways, causing insufficient utilization of photon-generated charge carriers. Here, radiationenhanced polycrystalline perovskite films with ultralong carrier lifetimes exceeding 6 μs and single-crystal-like electron-hole diffusion lengths of more than 5 μm are achieved. Prolongation of charge-carrier activities is attributed to the electronic structure regulation and the defect elimination at crystal boundaries in the perovskite with the introduction of phenylmethylammonium iodide. The introduced electron-rich anchor molecules around the host crystals prefer to fill the halide/organic vacancies at the boundaries, rather than form low-dimensional phases or be inserted into the original lattice. The weakening of the electron-phonon coupling and the excitonic features of the photogenerated carriers in the optimized films, which together contribute to the enhancement of carrier separation and transportation, are further confirmed. Finally the resultant perovskite films in fully operating solar cells with champion efficiency of 23.32% are validated and a minimum voltage deficit of 0.39 V is realized. Polycrystalline halide perovskites are of enormous excitement to be applied in highly efficient solar cells, [1-3] light-emitting diodes, [4] lasers, [5,6] and high-sensitivity photodetectors [7,8] due to their low fabricating costs [9,10] and excellent optoelectronic properties. [11] In order for these optoelectronic devices to access their theoretical performance limits, key metrics

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Growth of Amorphous Passivation Layer Using Phenethylammonium Iodide for High‐Performance Inverted Perovskite Solar Cells

Cited by 44 publications

References 36 publications

Enhanced Hole‐Carrier Selectivity in Wide Bandgap Halide Perovskite Photovoltaic Devices for Indoor Internet of Things Applications

Enhanced Hole‐Carrier Selectivity in Wide Bandgap Halide Perovskite Photovoltaic Devices for Indoor Internet of Things Applications

A New Strategy for Increasing the Efficiency of Inverted Perovskite Solar Cells to More than 21%: High‐Humidity Induced Self‐Passivation of Perovskite Films

Superior Carrier Lifetimes Exceeding 6 µs in Polycrystalline Halide Perovskites

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