Growth of aluminum nitride on (111) silicon: Microstructure and interface structure

Bourret, A.; Barski, A.; Rouvière, Jean-Luc; Renaud, Gilles; Barbier, Antoine

doi:10.1063/1.366929

Cited by 117 publications

(79 citation statements)

References 15 publications

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“…The dislocations may create mosaic structure. (4) Successful growth of GaN epi-layer requires controlled nitridation of the Si surface and the growth of AlN buffer having small size of grains of about 20 nm. (5) Small GaN grains of about 20-nm size, relatively highly misoriented with respect to the c-plane, lead to the creation mosaic structure of the thick GaN layer grown on the Si(111) substrate.…”

Section: Discussionmentioning

confidence: 99%

“…Heteroepitaxial GaN layers have been grown on many foreign substrates such as sapphire [1], silicon carbide [2] or silicon [3][4][5] for both optoelectronic and electronic applications. The success of the MOVPE epitaxy was discussed over many years, but the microscopic mechanism of the growth of low temperature buffer layer, and subsequent annealing and high temperature epitaxy is not well understood.…”

Section: Introductionmentioning

confidence: 99%

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TEM investigations of GaN layers grown on silicon and sintered GaN nano‐ceramic substrates

Borysiuk¹,

Caban

Strupiński

et al. 2007

Cryst. Res. Technol.

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GaN nano-ceramics were analyzed using transmission electron microscopy (TEM), showing that these ceramics are characterized by highly disoriented grains of the linear size of 100-150 nm. These GaN ceramics were used as substrates for GaN epitaxy in standard MOVPE conditions. For the comparison, MOVPE GaN layers on silicon substrates were grown using similar conditions. It is shown that MOVPE growth of GaN layers is highly anisotropic for both cases. However, the disorientation of the highly mismatched GaN layer on silicon is different from that characterizing GaN layer deposited on the ceramic substrate. In the latter case the disorientation is much higher, and three dimensional in nature, causing creation of polycrystalline structure having large number of the dislocations. In the case of the GaN layer grown on the silicon substrate the principal disorientation is due to rotation around c-axis, causing creation of mosaic structure of edge dislocations. Additionally, it is shown that the typical grain size in AlN nucleation layer on Si is smaller, of order of 20 nm. These two factors contribute to pronounced differences in later stage of the growth of GaN layer on the ceramic. Due to high growth anisotropy an appropriately thick GaN layer can, eventually, develop flat surfaces suitable for construction of optoelectronic and electronic structures. As shown by the TEM data, this can be achieved only at the cost of creation of the relatively large density of dislocations and stacking faults. The latter defects were not observed for the GaN growth on Si substrates.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

TEM investigations of GaN layers grown on silicon and sintered GaN nano‐ceramic substrates

Borysiuk¹,

Caban

Strupiński

et al. 2007

Cryst. Res. Technol.

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“…In contrast to recent progress in identifying surface structural arrangements on GaN [1], there is only limited knowledge currently on the surfaces structures of AlN. Several studies have previously reported the symmetry of AlN surface reconstructions as seen by reflection high energy electron diffraction (RHEED) [2][3][4][5][6][7][8][9]. RHEED patterns with symmetries of 1×1 and 2×2 are commonly reported, a 2×6 pattern is also commonly seen, and a sequence consisting of 1×3, 3×3, and 6×6 is reported by several groups.…”

Section: Introductionmentioning

confidence: 99%

Growth and Surface Reconstructions of AlN(0001) Films

et al. 2003

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The growth and surface reconstructions of AlN(0001) films were studied. For moderately Alrich surfaces, the 2×6 structure is commonly observed in reflection high energy electron diffraction. It is found that this pattern consists of 2√3×2√3-R30° and 5√3×5√3-R30°r econstructions according to scanning tunneling microscopy. Similar to the Ga-rich GaN(0001) surface, these structures are determined to contain 2−3 monolayers of excess Al terminating the surface. Based on first-principles theory the structures are believed to contain a laterally contracted Al layer. At higher Al coverage a thick, flat Al film is found to form on the surface. A high density of growth spirals (associated with threading dislocations having full or partial screw character) is found to be present on the surface, although this density decreases with increasing growth temperature.

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“…Por ello, se hace necesaria la utilización de capas amortiguadoras que mejoren la calidad cristalina de la posterior epitaxia de GaN (2) . Por otra parte en el sistema que nos ocupa resulta fundamental el uso de capas amortiguadoras debido a que en el crecimiento de GaN directamente sobre Si se produce la formación de una capa amorfa en la intercara (3,4) , dificultando el crecimiento de epitaxias de nitruros con calidad suficiente para la fabricación posterior de dispositivos.En el presente trabajo se analiza la influencia del dopado con Si sobre la calidad estructural de heteroepitaxias GaN/AlN/ Si(111) mediante microscopía electrónica de transmisión y se estudian los mecanismos responsables de los cambios estructurales que tienen lugar en tales sistemas. …”

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Efecto del dopado con Si sobre la estructura de defectos en sistemas heteroepitaxiales GaN/AlN/Si(111)

Sanchez¹,

Molina²,

Pacheco³

et al. 2000

Bol. Soc. Esp. Ceram. Vidr.

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En el presente artículo se lleva a cabo el análisis del efecto que el dopado con Si tiene sobre la estructura de defectos en epicapas de GaN crecidas por epitaxia de haces moleculares sobre sustratos de Si (111) utilizando capas amortiguadoras de AlN. La caracterización estructural se llevó a cabo mediante microscopía electrónica de transmisión convencional y de alta resolución. El dopado con Si afecta a la desorientación y tamaño de los subgranos que constituyen la estructura mosaico de la epicapa de GaN. El dopado con Si provoca un aumento en la densidad de defectos planares, así como una disminución en la densidad de dislocaciones de propagación. El incremento en el grado de desorientación de inclinación, así como en la densidad de defectos planares que se produce conforme aumenta el dopado con Si explican la disminución en la densidad de dislocaciones que alcanzan la superficie libre de GaN. The Si doping effect on the defect structure in GaN epilayers grown by molecular beam epitaxy on Si(111) substrates using AlN buffer layers has been studied. Transmission electron microscopy and related techniques have been used to carry out the structural characterization. The Si doping affects both the subgrain size and misorientation in GaN epilayer mosaic structure. The Si doping also leads to an increase of the planar defect density, as well as a decrease of the threading dislocation density. The enlargement of the subgrain tilt and the planar defect density explain the reduction of the dislocation density reaching the GaN free surface. Key words: Gallium nitride, GaN/AlN/Si(111), semiconductor heterostructure, TEM, HREM INTRODUCCIÓNEl gran interés que han despertado los semiconductores de banda prohibida ancha en la actualidad se centra en el diseño y elaboración de dispositivos optoelectrónicos de aplicación en la tecnología del almacenamiento de datos, así como de componentes electrónicos de alta potencia y elevada temperatura. La fabricación de diodos con emisión dentro del intervalo de energías que abarca desde 3.4 eV hasta 6.2 eV (1) , así como la obtención de diodos láser, han mostrado el enorme potencial de las aleaciones III-N para la producción de componentes electrónicos que operen en el intervalo del espectro visible y U.V. Así, los dispositivos basados en materiales semiconductores III-N son capaces de mejorar la potencia y temperatura de operación debido al elevado valor de las bandas prohibidas que presentan. Para el crecimiento de GaN se han utilizado una gran variedad de sustratos, entre los que destacan 6H-SiC, GaAs, MgAl 2 O 4 , zafiro y Si, así como diversas técnicas de crecimiento basadas principalmente en deposición de vapores químicos (CVD) y epitaxia de haces moleculares (MBE). El crecimiento de GaN sobre sustratos de Si, tiene particular interés, ya que permitiría su integración en la tecnología del Si, que ha alcanzado un alto grado de desarrollo. Sin embargo, debido al elevado desajuste reticular entre el GaN y el Si (16.9% en tensión) y a la diferencia en los coeficientes de expansión tér...

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Growth of aluminum nitride on (111) silicon: Microstructure and interface structure

Cited by 117 publications

References 15 publications

TEM investigations of GaN layers grown on silicon and sintered GaN nano‐ceramic substrates

TEM investigations of GaN layers grown on silicon and sintered GaN nano‐ceramic substrates

Growth and Surface Reconstructions of AlN(0001) Films

Efecto del dopado con Si sobre la estructura de defectos en sistemas heteroepitaxiales GaN/AlN/Si(111)

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