Growth of AlN by vectored flow epitaxy

Clayton, Andrew; Khandekar, A. A.; Kuech, T. F.; Mason, Nigel J.; Robinson, Mike; Watkins, Simon P.; Guo, Yu

doi:10.1016/j.jcrysgro.2006.10.130

Cited by 7 publications

(11 citation statements)

References 13 publications

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“…Both DEZn and t-BuOH were carried by N 2 and introduced into the chamber through separated injectors over a rotating platen holding the substrates. 13 Effectively, the substrates are alternately "dosed" with certain amounts of Zn/O reagents attached to the surface as a function of the growth temperature. The DEZn/t-BuOH flow rate ratio ͑1/1͒ and growth time ͑90 min͒ were kept constant resulting in 400-600 nm thick ZnO films.…”

Section: Changing Vacancy Balance In Zno By Tuning Synthesis Between mentioning

confidence: 99%

Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions

Galeckas

Zubiaga

Tuomisto

et al. 2010

Journal of Applied Physics

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The nature of intrinsic defects in ZnO films grown by metal organic vapor phase epitaxy was studied by positron annihilation and photoluminescence spectroscopy techniques. The supply of Zn and O during the film synthesis was varied by applying different growth temperatures (325–485 °C), affecting decomposition of the metal organic precursors. The microscopic identification of vacancy complexes was derived from a systematic variation in the defect balance in accordance with Zn/O supply trends.

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Section: Changing Vacancy Balance In Zno By Tuning Synthesis Between mentioning

confidence: 99%

Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions

Galeckas

Zubiaga

Tuomisto

et al. 2010

Journal of Applied Physics

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“…Spectroscopic ellipsometry [1][2][3][4][5][6][7][8] (SE) or optical reflectometry (OR) [9][10][11][12][13][14][15] can be used as an in situ analytical tool for thin film processes such as chemical bath deposition (CBD) 1 , thermal 2 or electron beam evaporation 3 , atomic layer deposition (ALD) 4 , sputtering 5 , molecular beam epitaxy 6 (MBE) and metal organic chemical vapor deposition (MOCVD) [7][8][9][10][11][12][13][14][15] .…”

Section: Introductionmentioning

confidence: 99%

“…Real-time measurements using OR typically uses a single wavelength diode laser [9][10][11][12][13][14][15] , whereas post growth characterization is carried out using a combined wavelength white light interferometer 16,17 . The film material being deposited is required to have a degree of transparency to the light source for optical interference to be observed.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Interpretation of Absolute Laser Reflectance During Optical Monitoring of Polycrystalline GaAs Deposition on Quartz Using Metalorganic Chemical Vapor Deposition

Clayton

Irvine

2011

Journal of Elec Materi

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Gallium arsenide was deposited by metal organic chemical vapor deposition in a horizontal quartz reactor tube using trimethylgallium and arsine at 400 o C -500 o C. Nucleation time and deposition rate were monitored using in situ laser reflectometry. This allowed differentiation between film and parasitic growth, which was not possible with other optical techniques. An absolute reflectance model was developed using measurements prior to GaAs deposition, and then employed to calculate values for GaAs on quartz. Detected reflectance intensities during experimental GaAs deposition were low compared to the model due to 3-dimensional island growth, causing scattering of the incident laser radiation.

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“…For example Shremer et al [8] presented growth of GaN using a rotating barrel reactor in which the group III and V precursors were injected at opposite sides of the chamber. Recently Clayton et al [9] presented a similar method for the growth of AlN, in which a disk shaped susceptor was rotated so that the substrates passed alternately under group III and V injectors. The FME technique has the advantage of greatly reducing gas phase reactions between the anion and cation precursors.…”

Section: Introductionmentioning

confidence: 99%