Growth of aligned SnS nanowire arrays for near infrared photodetectors

Shen, Guozhen; Chen, Haoran; Lou, Zheng

doi:10.1088/1674-4926/41/4/042602

Cited by 9 publications

(5 citation statements)

References 33 publications

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“…According to the formula 52 , 53 , where is responsivity, is the photocurrent and is the power intensity of incident light, a highest responsivity of our device is calculated to be around 16 mA/W. Although there is still room for improvement in responsivity compared to previously reported semiconductor IR photodetectors 54 , 55 , the values of photocurrent are comparable or higher than that of other previously reported VO 2 nanostructures-based photodetectors 27 , 31 , 47 . Figure 6 b shows the current–voltage (I–V) characteristics of the photodetector under dark and light (850 nm IR radiation of different intensities) conditions, revealing that the observed I–V curves exhibit almost linear, thus indicating that the Au electrodes made Ohmic contact with the film and that the junction resistance was relatively smaller than the total resistance of the device.…”

Section: Resultssupporting

confidence: 52%

High quality VO2 thin films synthesized from V2O5 powder for sensitive near-infrared detection

Guo

Tan

et al. 2021

Sci Rep

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Vapor transport method has been successfully used to synthesize high quality VO2 thin films on SiO2/Si substrate using V2O5 as a precursor in an inert-gas environment. The morphological and structural evolutions of the intermediate phases during the nucleation and growth processes were investigated by SEM and Raman spectroscopy, respectively. The results showed that the conversion of V2O5 powder to VO2 thin films was dominated by a melting-evaporation-nucleation-growth mechanism. Further characterization results demonstrated that the high quality crystals of monoclinic VO2 thin films exhibit a sharp resistance change up to 4 orders of magnitude. In addition, the VO2 thin films exhibited good near-infrared response, high stability, and reproducibility under ambient conditions, which should be promising for sensitive near-infrared detection. Our work not only provided a simple and direct approach to synthesize high quality VO2 thin films with distinct phase transition properties but also demonstrated the possible infrared sensing application in the future.

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Section: Resultssupporting

confidence: 52%

High quality VO2 thin films synthesized from V2O5 powder for sensitive near-infrared detection

Guo

Tan

et al. 2021

Sci Rep

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“…Because of the gap in the GaN nanorods, graphene is partially suspended on the nanorods, which enhances the electron transport capacity of graphene. Furthermore, the band of GaN nanorods can bend upward at the interface when the electron migration leaves the donor with a positive charge, and the built-in electric field is generated [28] . When ultraviolet light irradiates the detector, it is absorbed by the GaN nanorods after passing through the graphene transparent electrode.…”

Section: Results and Discussion ( )mentioning

confidence: 99%

“…Under the reverse bias, the electron hole pairs are ionized by the collision with the lattice in the process of motion and are excited again to produce the gain. Because the structure of nanorod arrays increase the number of photogenerated carriers, both the gain and the EQE increase [28] . One of the other most important quality factors of photodetectors is the specific detectivity (D * ), which can be expressed as [29] :…”

Section: Results and Discussion ( )mentioning

confidence: 99%

Vertical Schottky ultraviolet photodetector based on graphene and top–down fabricated GaN nanorod arrays

Zhang¹,

Yan²,

Yang³

et al. 2022

J. Semicond.

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GaN has been widely used in the fabrication of ultraviolet photodetectors because of its outstanding properties. In this paper, we report a graphene–GaN nanorod heterostructure photodetector with fast photoresponse in the UV range. GaN nanorods were fabricated by a combination mode of dry etching and wet etching. Furthermore, a graphene–GaN nanorod heterostructure ultraviolet detector was fabricated and its photoelectric properties were measured. The device exhibits a fast photoresponse in the UV range. The rising time and falling time of the transient response were 13 and 8 ms, respectively. A high photovoltaic responsivity up to 13.9 A/W and external quantum efficiency up to 479% were realized at the UV range. The specific detectivity D * = 1.44 × 1010 Jones was obtained at –1 V bias in ambient conditions. The spectral response was measured and the highest response was observed at the 360 nm band.

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“…1D inorganic nanowires provide many opportunities and capabilities for use in flexible photodetectors as they have the large surface to volume ratio, mechanical suppleness along the growth direction, good transparency, and excellent electronic/optoelectronic properties. , The single nanowire PDs are usually fabricated because they offer information about the photoresponse properties of NWs. Based on the band gap of semiconducting nanowires, three types of photodetectors from the UV to the vis to the NIR region could be achieved.…”

Section: Device Configurationmentioning

confidence: 99%

Low-Dimensional Nanostructure Based Flexible Photodetectors: Device Configuration, Functional Design, Integration, and Applications

Shen

2021

Acc. Mater. Res.

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Conspectus A flexible photodetector that extends unique capabilities such as deformation, adaptivity to a soft surface, mechanical stability, and high photoresponsivity compared to the rigid devices has come to prominence in telecommunication, remote sensing, medical diagnostics, image sensing, optical communication, and the biomimetic human visual system. Low-dimensional nanomaterials consisting of one-dimensional (1D) nanowires (NWs), 2D nanoplates, and heterojunctions such as quantum dot modified NWs, hierarchical 1D hybrid nanomaterials, 1D/2D composites, 2D/2D heterostructures, etc. are considered as promising photosensitive materials in designing a flexible photodetector owing to the large surface to volume ratio and mechanical suppleness along the growth direction of the 1D NWs, excellent mechanical strength, superior structural stability, fast electron mobility, and low power dissipation of 2D nanoplates, and the synergistic effect of the heterojunctions. In this Account, we present our recent progress on low-dimensional nanostructure based flexible photodetectors. First, the three components, including the soft substrate, conductive electrodes, and representative low-dimensional nanomaterials (1D NWs, 2D nanoplates, and various types of heterojunctions) required for achieving flexible photodetector are summarized. Then, the design strategies toward functional photodetectors are presented in terms of their flexibility, stretchability, transparency, and photodetector with tunable photoresponse properties. The integration concepts of the photodetector with flexible energy storage to realize independent detectivity and the field effect transistor to amplify the responsivity are also provided. Furthermore, the application examples of the flexible photodetector in the artificial visual memory system and the biomimetic eye are reviewed. Finally, we discuss the future prospects of the low-dimensional nanostructure based flexible photodetector in the field of flexible image sensing and integrated electronics.

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Growth of aligned SnS nanowire arrays for near infrared photodetectors

Cited by 9 publications

References 33 publications

High quality VO2 thin films synthesized from V2O5 powder for sensitive near-infrared detection

High quality VO2 thin films synthesized from V2O5 powder for sensitive near-infrared detection

Vertical Schottky ultraviolet photodetector based on graphene and top–down fabricated GaN nanorod arrays

Low-Dimensional Nanostructure Based Flexible Photodetectors: Device Configuration, Functional Design, Integration, and Applications

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