Growth of AgGaTe2 thin films

Patel, S. M.; Patil, Madhuri

doi:10.1016/0167-577x(89)90021-9

Cited by 6 publications

(1 citation statement)

References 14 publications

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“…Additionally, AGT has been used in the field of non-linear optics for the development of tunable solid state lasers [16]. AGT thin films can easily be fabricated by using various procedures including flash evaporation [13,17], thermal evaporation [16], close spaced sublimation (CSS) method [18], vertical Bridgman technique [15] and so on. But, AGT has not been utilized as much in solar cells despite being a better choice for the applications in solar cells.…”

Section: Introductionmentioning

confidence: 99%

Design of a highly efficient n-CdS/p-AgGaTe₂/p+-SnS double-heterojunction thin film solar cell

et al. 2023

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In this article, AgGaTe2-based n-CdS/p-AgGaTe2/p+-SnS double-heterojunction solar cells have been designed and explored utilizing a solar cell capacitance simulator (SCAPS-1D). This design manifested n-type CdS and p+-type SnS as window and back surface field (BSF) layer, respectively with the AgGaTe2 absorber. The major contributing parameters of these layers such as thickness, doping concentration level, and bulk flaws have been adjusted to reach the optimum computation. This introduced n-CdS/p-AgGaTe2/p+-SnS double-heterostructure solar cell demonstrates the significant power conversion efficiency (PCE) of 32.48% with the open circuit voltage, VOC of 0.96 V, short circuit current, JSC of 38.64 mA/cm2, and the Fill factor, FF of 87.31%. This remarkable efficiency is originated by the formation of a higher built-in potential at the p-AgGaTe2/p+-SnS heterostructure and a decrease in the surface recombination velocity brought on by the SnS BSF layer. This computational study demonstrates the potential of AgGaTe2 as an absorber and SnS as a BSF layer, and pave the way for the AgGaTe2-based experimental research in the era of solar cells.

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Section: Introductionmentioning

confidence: 99%

Design of a highly efficient n-CdS/p-AgGaTe₂/p+-SnS double-heterojunction thin film solar cell

et al. 2023

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Electrical Properties of Cu1—xAgxGaTe2 Thin Films

Kuhn¹,

Friemelt²,

Fess³

et al. 1997

phys. stat. sol. (a)

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Silver gallium telluride (AgGaTe2) crystal structure, lattice parameters, physical properties

Landolt-Börnstein - Group III Condensed Matter

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Growth of AgGaTe2 thin films

Cited by 6 publications

References 14 publications

Design of a highly efficient n-CdS/p-AgGaTe₂/p+-SnS double-heterojunction thin film solar cell

Design of a highly efficient n-CdS/p-AgGaTe₂/p+-SnS double-heterojunction thin film solar cell

Electrical Properties of Cu1—xAgxGaTe2 Thin Films

Silver gallium telluride (AgGaTe2) crystal structure, lattice parameters, physical properties

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Growth of AgGaTe2 thin films

Cited by 6 publications

References 14 publications

Design of a highly efficient n-CdS/p-AgGaTe2/p+-SnS double-heterojunction thin film solar cell

Design of a highly efficient n-CdS/p-AgGaTe2/p+-SnS double-heterojunction thin film solar cell

Electrical Properties of Cu1—xAgxGaTe2 Thin Films

Silver gallium telluride (AgGaTe2) crystal structure, lattice parameters, physical properties

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Product

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Design of a highly efficient n-CdS/p-AgGaTe₂/p+-SnS double-heterojunction thin film solar cell

Design of a highly efficient n-CdS/p-AgGaTe₂/p+-SnS double-heterojunction thin film solar cell